Design and fabrication of short and middle wavelength infrared dual band-pass filter at cryogenic temperature

Sheng Zhou; Dingquan Liu; Kaixuan Wang; Yaopeng Li; Jinchao Hu; Shuguang Wang; Haoxiang Zhu

doi:10.3788/IRLA20210964

Infrared and Laser Engineering, Volume. 51, Issue 9, 20210964(2022)

Design and fabrication of short and middle wavelength infrared dual band-pass filter at cryogenic temperature

Sheng Zhou^1,3, Dingquan Liu^1,2,3、*, Kaixuan Wang¹, Yaopeng Li¹, Jinchao Hu¹, Shuguang Wang¹, and Haoxiang Zhu¹

Author Affiliations

¹Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

²School of Physical Science and Technology, ShanghaiTech University, Shanghai 200031, China

³University of Chinese Academy of Sciences, Beijing 100049, China

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Figures & Tables(21)

Fig. 1. Transmission spectrum of Ge single layer film at 300 K and 100 K temperature

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Fig. 2. Transmission spectrum of SiO single layer film at 300 K and 100 K temperature

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$Refractive index fitting curves of Ge single layer film at 300 K and 100 K temperature$

Fig. 3. Refractive index fitting curves of Ge single layer film at 300 K and 100 K temperature

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$Refractive index fitting curves of SiO single layer film at 300 K and 100 K temperature$

Fig. 4. Refractive index fitting curves of SiO single layer film at 300 K and 100 K temperature

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Fig. 5. Designed transmittance curve of the short-wavelength band-pass filter

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Fig. 6. Designed transmittance curve of the short-wavelength band-pass filter with transmitted longer band at 100 K and 300 K temperature

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Fig. 7. Transmission spectrum of the shorter band-pass filter film when the optical thickness of the spacer layers are increased by 1%, 2% and 3%, respectively

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Fig. 8. Transmittance curves of the designed middle-wavelength band-pass filter with transmitted shorter band at 100 K and 300 K temperature

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Fig. 9. Designed spectrum of the dual band-pass filter at 100 K and 300 K temperature

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Fig. 10. Simulated monitor curve of single-wavelength POEM at 2 020 nm for the shorter band-pass filter film

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Fig. 11. Measured transmittance spectra curves of the short-wavelength band-pass filter film at 100 K and 300 K temperature

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Fig. 12. Measured transmittance spectra curves of the middle-wavelength band-pass filter film at 100 K and 300 K temperature

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Fig. 13. Measured spectra transmittance curves of the dual band-pass filter at 100 K and 300 K temperature

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Fig. 14. Sensitivity of each layer in the shorter band-pass filter

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Fig. 15. Transmission spectrum curves of the shorter band-pass filter film when random errors of 1%-3% introduced into the 5^th, 10^th, 15^th and 19^th layers

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Table 1. Optical and mechanical properties of Ge, Si, ZnSe and sapphire

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Table 1. Optical and mechanical properties of Ge, Si, ZnSe and sapphire

	Refractive index	Transparent wavelength/ μm	Young's modulus/ N·m⁻²	Linear expansion coefficient/ ℃
Ge	4.0	2.0–12.5	10.3×10¹⁰	5.5×10⁻⁶
Si	3.4	1.4–8.0	13.1×10¹⁰	4.2×10⁻⁶
ZnSe	2.4	0.8–14.0	5.4×10¹⁰	7.1×10⁻⁶
Sapphire	1.75	0.2–5.0	34.5×10¹⁰	6.7×10⁻⁶

Table 2. Preparation parameters of Ge and SiO layers
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Table 2. Preparation parameters of Ge and SiO layers
Substrate temperature/ ℃ Evaporation rate/ Å·s⁻¹ Vacuum pressure/ 10⁻⁴Pa
Ge film 250±5 6±2 6–8
SiO film 250±5 15±3 6–8

Table 3. Refractive index of Ge and SiO single layer film at 300 K and 100 K temperature
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Table 3. Refractive index of Ge and SiO single layer film at 300 K and 100 K temperature
300 K 100 K
Ge film 4.05 3.97
SiO film 1.78 1.77

Table 4. Designed optical properties the shorter band-pass filter film at 100 K and 300 K temperature
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Table 4. Designed optical properties the shorter band-pass filter film at 100 K and 300 K temperature
100 K 300 K
Average transmittance Tave 92.0% 89.9%
Ripple amplitudes $\Delta $ 1.1% 5.5%
Left edge steepness gL 1.1% 1.2%
Right edge steepness gR 1.8% 2.0%

Table 5. Top ripple amplitudes and edge steepness of the shorter and the longer channel
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Table 5. Top ripple amplitudes and edge steepness of the shorter and the longer channel
Top ripple amplitude Left edge steepness Right edge steepness
Short-wavelength channel (2.60-2.85 μm) 2.1% 1.6% 2.3%
Middle-wavelength channel (4.10-4.40 μm) 3.8% 1.3% 1.4%

Table 6. T_0.5P position shift value of the shorter and the longer channels while temperature reduces from 300 K to 100 K

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Table 6. T_0.5P position shift value of the shorter and the longer channels while temperature reduces from 300 K to 100 K

	Left T_0.5P position shift value	Right T_0.5P position shift value/nm
Short-wavelength channel (2.60-2.85 μm)	−48	−40
Middle-wavelength channel (4.10-4.40 μm)	−29	−36

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Sheng Zhou, Dingquan Liu, Kaixuan Wang, Yaopeng Li, Jinchao Hu, Shuguang Wang, Haoxiang Zhu. Design and fabrication of short and middle wavelength infrared dual band-pass filter at cryogenic temperature[J]. Infrared and Laser Engineering, 2022, 51(9): 20210964

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Paper Information

Category: Infrared technology and application

Received: Dec. 15, 2021

Accepted: --

Published Online: Jan. 6, 2023

The Author Email:

DOI:10.3788/IRLA20210964

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. Optical and mechanical properties of Ge, Si, ZnSe and sapphire

Table 1. Optical and mechanical properties of Ge, Si, ZnSe and sapphire

Table 2. Preparation parameters of Ge and SiO layers

Table 2. Preparation parameters of Ge and SiO layers

Table 3. Refractive index of Ge and SiO single layer film at 300 K and 100 K temperature

Table 3. Refractive index of Ge and SiO single layer film at 300 K and 100 K temperature

Table 4. Designed optical properties the shorter band-pass filter film at 100 K and 300 K temperature

Table 4. Designed optical properties the shorter band-pass filter film at 100 K and 300 K temperature

Table 5. Top ripple amplitudes and edge steepness of the shorter and the longer channel

Table 5. Top ripple amplitudes and edge steepness of the shorter and the longer channel

Table 6. T0.5P position shift value of the shorter and the longer channels while temperature reduces from 300 K to 100 K

Table 6. T0.5P position shift value of the shorter and the longer channels while temperature reduces from 300 K to 100 K

Table 6. T_0.5P position shift value of the shorter and the longer channels while temperature reduces from 300 K to 100 K

Table 6. T_0.5P position shift value of the shorter and the longer channels while temperature reduces from 300 K to 100 K