Acta Photonica Sinica, Volume. 45, Issue 9, 914001(2016)

Simulation Analysis of 2 μm InGaAsSb/AlGaAsSb Laser Diode with Dual Waveguide

AN Ning*... HAN Xing-wei, LIU Cheng-zhi, FAN Cun-bo, DONG Xue and SONG Qing-li |Show fewer author(s)
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    References(12)

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    [3] [3] SONG Yu-zhi, SONG Jia-kun, ZHANG Yu, et al. High power and low loss room-temperature operation of 2.4 μm GaInAsSb/ AlGaAsSb type-I strained quantum-well laser diodes[C]. SPIE, 2015: 9671: 96710P.

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    [5] [5] MERMELSTEIN C, SIMANOWSKI S, MAYER M, et al. Room-temperature cw operation of GaInAsSb/AIGaAsSb quantum well diode lasers emitting beyond 2 um[J].IEEE Lasers and Electro-Optics, 2000, 6784136: 65.

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    [7] [7] ZIEGLER M, HEMPEL M, LARSEN H E, et al. Physical limits of semiconductor laser operation: A time-resolved analysis of catastrophic optical damage[J]. Applied Physics Letters, 2010, 97(2): 021110.

    [8] [8] ALMUHANNA A, ALHARBI A, SALHI A. Waveguide design optimization for long wavelength semiconductor lasers with low threshold current and small beam divergence[J]. Journal of Modern Physics, 2011, 2(04): 225-230.

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    AN Ning, HAN Xing-wei, LIU Cheng-zhi, FAN Cun-bo, DONG Xue, SONG Qing-li. Simulation Analysis of 2 μm InGaAsSb/AlGaAsSb Laser Diode with Dual Waveguide[J]. Acta Photonica Sinica, 2016, 45(9): 914001

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    Paper Information

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    Received: Mar. 21, 2016

    Accepted: --

    Published Online: Oct. 19, 2016

    The Author Email: Ning AN (anning4252@126.com)

    DOI:10.3788/gzxb20164509.0914001

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