Photonics Research, Volume. 3, Issue 4, 184(2015)

Effect of packing density and packing geometry on light extraction of III-nitride light-emitting diodes with microsphere arrays

Peifen Zhu1,2、* and Nelson Tansu1
Author Affiliations
  • 1Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University,Bethlehem, Pennsylvania 18015, USA
  • 22Department of Physics and Engineering Physics, The University of Tulsa, 800 South Tucker Drive, Tulsa,Oklahoma 74104, USA
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    References(54)

    [19] G. Y. Liu, J. Zhang, C. K. Tan, N. Tansu. Efficiency-droop suppression by using large-bandgap AlGaInN thin barrier layers in InGaN quantum-well light-emitting diodes. IEEE Photon. J., 5, 2201011(2013).

    [23] V. Haerle, B. Hahn, S. Kaiser, A. Weimar, S. Bader, F. Eberhard, A. Plossl, D. Eisert. High brightness LEDs for general lighting applications using the new ThinGaN technology. Phys. Status Solidi A, 201, 2736-2739(2004).

    [40] J. Q. Xi, M. F. Schubert, J. K. Kim, E. F. Schubert, M. F. Chen, S. Y. Lin, W. Liu, J. A. Smart. Optical thin-film materials with low refractive index for broadband elimination of Fresnel reflection. Nat. Photonics, 1, 176-179(2007).

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    Peifen Zhu, Nelson Tansu. Effect of packing density and packing geometry on light extraction of III-nitride light-emitting diodes with microsphere arrays[J]. Photonics Research, 2015, 3(4): 184

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    Paper Information

    Category: Optoelectronics

    Received: Feb. 27, 2015

    Accepted: May. 23, 2015

    Published Online: Jan. 6, 2016

    The Author Email: Peifen Zhu (pez311@lehigh.edu)

    DOI:10.1364/PRJ.3.000184

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