Journal of Applied Optics, Volume. 45, Issue 6, 1138(2024)
Development of 10 μm~11 μm bandpass filter for surface temperature detection
Figures & Tables(24)
Fig. 3. Refractive index dispersion distribution of thin-film materials
Fig. 8. Spectral transmittance curve of combined membrane system design
Fig. 12. Relative film thickness distribution of rotary spherical workpiece plate
Fig. 14. Thickness errors of Ge film of long-wavelength and short-wavelength pass films
Fig. 15. Relation between monitored and actual thicknesses of ZnS film
Table 1. Optical and mechanical properties of Ge, PbTe, ZnSe, ZnS and YF3
View tableView in ArticleTable 1. Optical and mechanical properties of Ge, PbTe, ZnSe, ZnS and YF3
Material Density/ g·cm−3 Acoustic impedance/ Pa·s·m−1 Refractive index Transparent wave length/μm Young's modulus/ GPa Linear expansion coefficient/K Ge 5.32 1.38×107 4.2（10.5 μm） 2～23 103 5.5×10−6 PbTe 8.8 3.02×107 5.0（10.5 μm） 1～25 54 2.8×10−7 Znse 5.27 2.69×107 2.41（10.5 μm） 2～14 67 7.1×10−6 ZnS 4.09 1.83×107 2.2（10.5 μm） 0.38～14 97 7.6×10−6 YF3 4.32 2.06×107 1.49（10.5 μm） 0.35～12 115 9.2×10−6
Table 2. Designed optical properties of bandpass filter film
View tableView in ArticleTable 2. Designed optical properties of bandpass filter film
Parameter Value/% Wavelength/μm Average transmittance Tave 99.73 10～11 Top ripple amplitude ∆ 0.7 10～11 Rejection rate K 0.019 4～9.5 0.031 11.5～16
Table 3. Ion source process parameters
View tableView in ArticleTable 3. Ion source process parameters
Name Beam E/B/% Gas Ar/sccm Voltage/V Current/mA Cleaning 200 3 000 150 8 Ge 150 500 200 6 ZnS 120 500 200 6
Table 4. Deposition process parameters of Ge and ZnS films
View tableView in ArticleTable 4. Deposition process parameters of Ge and ZnS films
Material Substrate temperature/℃ Degree of vacuum /Pa Deposition rate/(nm/s) Ge 150 4.0×10−4 0.5 ZnS 150 4.0×10−4 2.5
Table 5. Thickness errors at S-point position of Ge films
View tableView in ArticleTable 5. Thickness errors at S-point position of Ge films
Number Film Design thickness /nm Film thickness on the crystal oscillator/nm Drop height of liquid level d/mm Error value of film thickness/ nm 1 Ge 475.15 703.60 2.75 +0.273 3 Ge 240.68 356.40 1.39 +0.342 5 Ge 416.67 682.77 2.67 +1.03
Table 6. Correspondence between monitored and actual thicknesses of ZnS film
View tableView in ArticleTable 6. Correspondence between monitored and actual thicknesses of ZnS film
Monitor thickness X/nm Actual thicknessY/nm 200 134.5 400 273.1 600 409.6 800 550.2 1 000 687.5 1 200 824.2
Table 7. Spectrum test results
View tableView in ArticleTable 7. Spectrum test results
Parameter Wavelength/μm Value/% Average transmittance Tave 10～11 94.3 Top ripple amplitude ∆ 10～11 1.6 Rejection rate K 4～9.5 <0.1 11.5～16 <0.1
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Xiuhua FU, Kaifa REN, Ben WANG, Yonggang PAN, Zhaowen LIN, Jiulin SU, Suotao DONG, Gong ZHANG. Development of 10 μm~11 μm bandpass filter for surface temperature detection[J]. Journal of Applied Optics, 2024, 45(6): 1138
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Received: Jan. 9, 2024
Accepted: --
Published Online: Jan. 14, 2025
The Author Email: REN Kaifa (任开发)
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