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Acta Optica Sinica, Volume. 39, Issue 5, 0523003(2019)

Improved Charge Balance of Quantum Dot Light-Emitting Diodes via Spiro-OMeTAD Electron Blocking Layer

Wenjing Zhang1, Qin Zhang1、*, Liang Yang2, Ying Jiang1, Chun Chang1, Xiao Jin1, Feng Li1, Yan Huang1, and Qinghua Li1、*
Author Affiliations
  • 1 School of Measuring and Optical Engineering, Nanchang Hangkong University, Nanchang, Jiangxi 330063, China
  • 2 Fujian Key Laboratory of Functional Materials and Applications, School of Materials Science and Engineering, Xiamen University of Technology, Xiamen, Fujian 361024, China
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    AbstractGet PDF(in Chinese)
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    Figures & Tables(7)
    Green CdSe/ZnS nuclear shell quantum dots. (a) TEM image; (b) high-resolution TEM image; (c) XRD pattern; (d) atomic absorption and photoluminescence (PL) spectra

    Fig. 1. Green CdSe/ZnS nuclear shell quantum dots. (a) TEM image; (b) high-resolution TEM image; (c) XRD pattern; (d) atomic absorption and photoluminescence (PL) spectra

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    Device based on Green CdSe/ZnS nuclear shell quantum dots. (a) Structural diagram; (b) energy level diagram

    Fig. 2. Device based on Green CdSe/ZnS nuclear shell quantum dots. (a) Structural diagram; (b) energy level diagram

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    AFM images of Spiro-OMeTAD buffer layers with different amounts of spin coating. (a) 20 μL; (b) 40 μL; (c) 60 μL; (d) 80 μL; (e) 100 μL

    Fig. 3. AFM images of Spiro-OMeTAD buffer layers with different amounts of spin coating. (a) 20 μL; (b) 40 μL; (c) 60 μL; (d) 80 μL; (e) 100 μL

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    Performance comparison of traditional devices and those added with Spiro-OMeTAD electronic buffer layer. (a) External quantum efficiency and current efficiency versus voltage; (b) brightness versus voltage; (c) current density versus voltage

    Fig. 4. Performance comparison of traditional devices and those added with Spiro-OMeTAD electronic buffer layer. (a) External quantum efficiency and current efficiency versus voltage; (b) brightness versus voltage; (c) current density versus voltage

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    Electroluminescence (EL) spectra. (a) Traditional device; (b) device added with Spiro-OMeTAD buffer layer; (c) brightness of traditional device and that added with Spiro-OMeTAD electronic buffer layer versus time at constant current

    Fig. 5. Electroluminescence (EL) spectra. (a) Traditional device; (b) device added with Spiro-OMeTAD buffer layer; (c) brightness of traditional device and that added with Spiro-OMeTAD electronic buffer layer versus time at constant current

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    Schematics of electron transport. (a) Traditional device; (b) device added with Spiro-OMeTAD buffer layer

    Fig. 6. Schematics of electron transport. (a) Traditional device; (b) device added with Spiro-OMeTAD buffer layer

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    • Table 1. Performances of device prepared with different amounts of Spiro-OMeTAD spin coating

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      Table 1. Performances of device prepared with different amounts of Spiro-OMeTAD spin coating

      Volume of Spiro-OMeTAD /μLEQE /%Current efficiency /(cd·A-1)Luminance /(cd·m-2)Current density /(mA·cm-2)
      206.437.2630800.0888.00
      406.707.6737100.0933.00
      608.558.4740677.51022.50
      8011.8713.2053055.0790.00
      10010.6511.6149405.0734.50
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    Wenjing Zhang, Qin Zhang, Liang Yang, Ying Jiang, Chun Chang, Xiao Jin, Feng Li, Yan Huang, Qinghua Li. Improved Charge Balance of Quantum Dot Light-Emitting Diodes via Spiro-OMeTAD Electron Blocking Layer[J]. Acta Optica Sinica, 2019, 39(5): 0523003

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    Paper Information

    Category: Optical Devices

    Received: Dec. 20, 2018

    Accepted: Jan. 21, 2019

    Published Online: May. 10, 2019

    The Author Email:

    DOI:10.3788/AOS201939.0523003

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology