Gate tunable spatial accumulation of valley-spin in chemical vapor deposition grown 40°-twisted bilayer WS<sub>2</sub>

Siwen Zhao; Gonglei Shao; Zheng Vitto Han; Song Liu; Tongyao Zhang

doi:10.1088/1674-4926/44/1/012001

Journal of Semiconductors, Volume. 44, Issue 1, 012001(2023)

Gate tunable spatial accumulation of valley-spin in chemical vapor deposition grown 40°-twisted bilayer WS₂

Siwen Zhao¹, Gonglei Shao², Zheng Vitto Han^3,4, Song Liu^2、*, and Tongyao Zhang^3,4、**

¹Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110010, China

²Institute of Chemical Biology and Nanomedicine, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China

³State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan 030006, China

⁴Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China

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References(25)

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Siwen Zhao, Gonglei Shao, Zheng Vitto Han, Song Liu, Tongyao Zhang. Gate tunable spatial accumulation of valley-spin in chemical vapor deposition grown 40°-twisted bilayer WS₂[J]. Journal of Semiconductors, 2023, 44(1): 012001

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Paper Information

Category: Articles

Received: Nov. 2, 2022

Accepted: --

Published Online: Feb. 22, 2023

The Author Email: Liu Song (liusong@hnu.edu.cn), Zhang Tongyao (tongyao_zhang@sxu.edu.cn)

DOI:10.1088/1674-4926/44/1/012001

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology