Opto-Electronic Engineering, Volume. 51, Issue 6, 240116-1(2024)

Effect of oxygen partial pressure on amorphous Ga2O3-based solar-blind ultraviolet photodetectors

Rui Yang1, Sishuo Yang1, and Lingxuan Qian1,2、*
Author Affiliations
  • 1State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 611731, China
  • 2Chongqing Institute of Microelectronics Industry Technology, University of Electronic Science and Technology of China, Chongqing 401332, China
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    References(31)

    [1] Xu J J, Zheng W, Huang F. Gallium oxide solar-blind ultraviolet photodetectors: a review[J]. J Mater Chem C, 7, 8753-8770(2019).

    [2] Xiao Y, Yang S S, Cheng L Y et al. Research progress of solar-blind UV photodetectors based on amorphous gallium oxide[J]. Opto-Electron Eng, 50, 230005(2023).

    [3] Qin Y, Long S B, Dong H et al. Review of deep ultraviolet photodetector based on gallium oxide[J]. Chin Phys B, 28, 018501(2019).

    [4] Xu Y, Cheng Y L, Li Z et al. High performance gate tunable solar blind ultraviolet phototransistors based on amorphous Ga2O3 films grown by mist chemical vapor deposition[J]. Nano Select, 2, 2112-2120(2021).

    [5] Wang Z, Zheng W, Hu Q C et al. Pt/(InGa)2O3/n-Si heterojunction-based solar-blind ultraviolet photovoltaic detectors with an ideal absorption cutoff edge of 280 nm[J]. ACS Appl Mater Interfaces, 13, 44568-44576(2021).

    [6] Chen X, Liu K W, Wang X et al. Performance enhancement of a ZnMgO film UV photodetector by HF solution treatment[J]. J Mater Chem C, 5, 10645-10651(2017).

    [7] Varshney U, Aggarwal N, Gupta G. Current advances in solar-blind photodetection technology: using Ga2O3 and AlGaN[J]. J Mater Chem C, 10, 1573-1593(2022).

    [8] Lu Y J, Lin C N, Shan C X. Optoelectronic diamond: growth, properties, and photodetection applications[J]. Adv Opt Mater, 6, 1800359(2018).

    [9] Chen M N, Zhang Z P, Wen B et al. Low dark current and high stability X-ray detector based on FAPbI3/Ga2O3 heterojunction[J]. J Alloys Compd, 941, 168989(2023).

    [10] Arora K, Goel N, Kumar M et al. Ultrahigh performance of self-powered β-Ga2O3 thin film solar-blind photodetector grown on cost-effective Si substrate using high-temperature seed layer[J]. ACS Photonics, 5, 2391-2401(2018).

    [11] Wang J, Ye L J, Wang X et al. High transmittance β-Ga2O3 thin films deposited by magnetron sputtering and post-annealing for solar-blind ultraviolet photodetector[J]. J Alloys Compd, 803, 9-15(2019).

    [12] Lee S H, Kim S B, Moon Y J et al. High-responsivity deep-ultraviolet-selective photodetectors using ultrathin gallium oxide films[J]. ACS Photonics, 4, 2937-2943(2017).

    [13] Qian L X, Wu Z H, Zhang Y Y et al. Ultrahigh-responsivity, rapid-recovery, solar-blind photodetector based on highly nonstoichiometric amorphous gallium oxide[J]. ACS Photonics, 4, 2203-2211(2017).

    [14] Wang C, Fan W H, Zhang Y C et al. Effect of oxygen flow ratio on the performance of RF magnetron sputtered Sn-doped Ga2O3 films and ultraviolet photodetector[J]. Ceram Int, 49, 10634-10644(2023).

    [15] Yang Y, Liu W M, Huang T T et al. Low deposition temperature amorphous ALD-Ga2O3 thin films and decoration with MoS2 multilayers toward flexible solar-blind photodetectors[J]. ACS Appl Mater Interfaces, 13, 41802-41809(2021).

    [16] Kobayashi E, Boccard M, Jeangros Q et al. Amorphous gallium oxide grown by low-temperature PECVD[J]. J Vac Sci Technol, 36, 021518(2018).

    [17] Saikumar A K, Nehate S D, Sundaram K B. Review—RF sputtered films of Ga2O3[J]. ECS J Solid State Sci Technol, 8, Q3064-Q3078(2019).

    [18] Chen Y H, Han S, Yue D W et al. UV response characteristics of amorphous Ga2O3 thin films with different microatom distributions and a low-temperature fabricated ultrahigh-performance a-Ga2O3 UV detector[J]. ACS Photonics, 11, 985-999(2024).

    [19] Kumar S S, Rubio E J, Noor-A-Alam M et al. Structure, morphology, and optical properties of amorphous and nanocrystalline gallium oxide thin films[J]. J Phys Chem C, 117, 4194-4200(2013).

    [20] Ramana C V, Rubio E J, Barraza C D et al. Chemical bonding, optical constants, and electrical resistivity of sputter-deposited gallium oxide thin films[J]. J Appl Phys, 115, 043508(2014).

    [21] Liao Y K, Jiao S J, Li S F et al. Effect of deposition pressure on the structural and optical properties of Ga2O3 films obtained by thermal post-crystallization[J]. CrystEngComm, 20, 133-139(2018).

    [22] Wang Y H, Li H R, Cao J et al. Ultrahigh gain solar blind avalanche photodetector using an amorphous Ga2O3-based heterojunction[J]. ACS Nano, 15, 16654-16663(2021).

    [23] Wang Y F, Lin Z H, Ma J L et al. Multifunctional solar-blind ultraviolet photodetectors based on p-PCDTBT/n-Ga2O3 heterojunction with high photoresponse[J]. InfoMat, 6, e12503(2024).

    [24] Liu Y M, Qin H Y, Peng C et al. Boosting the responsivity of amorphous-Ga2O3 solar-blind photodetector via organosilicon surface passivation[J]. Appl Phys Lett, 124, 082102(2024).

    [25] Li Z, Feng Z Q, Xu Y et al. High performance β-Ga2O3 solar-blind metal–oxide–semiconductor field-effect phototransistor with hafnium oxide gate dielectric process[J]. IEEE Electron Device Lett, 42, 545-548(2021).

    [26] Zhi Y S, Liu Z, Zhang S H et al. 16 × 4 linear solar-blind UV photoconductive detector array based on β-Ga2O3 film[J]. IEEE Trans Electron Devices, 68, 3435-3438(2021).

    [27] Li X X, Zeng G, Li Y C et al. High responsivity and flexible deep-UV phototransistor based on Ta-doped β-Ga2O3[J]. npj Flex Electron, 6, 47(2022).

    [28] Cui S J, Mei Z X, Zhang Y H et al. Room-temperature fabricated amorphous Ga2O3 high-response-speed solar-blind photodetector on rigid and flexible substrates[J]. Adv Opt Mater, 5, 1700454(2017).

    [29] Shi X L, Liu H Y, Hou S et al. The applications of surface plasmons in Ga2O3 ultraviolet photodetector[J]. Opto-Electron Eng, 45, 170728(2018).

    [30] Hou S, Liu Q, Xing Z Y et al. Effects of Sn doping on Ga2O3-based solar blind photodetectors[J]. Opto-Electron Eng, 46, 190011(2019).

    [31] Liu N S, Fang G J, Zeng W et al. Direct growth of lateral ZnO nanorod UV photodetectors with schottky contact by a single-step hydrothermal reaction[J]. ACS Appl Mater Interfaces, 2, 1973-1979(2010).

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    Rui Yang, Sishuo Yang, Lingxuan Qian. Effect of oxygen partial pressure on amorphous Ga2O3-based solar-blind ultraviolet photodetectors[J]. Opto-Electronic Engineering, 2024, 51(6): 240116-1

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    Paper Information

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    Received: May. 20, 2024

    Accepted: Jun. 4, 2024

    Published Online: Oct. 21, 2024

    The Author Email: Lingxuan Qian (钱凌轩)

    DOI:10.12086/oee.2024.240116

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