Acta Physica Sinica, Volume. 69, Issue 10, 102901-1(2020)

Ions beam induced luminescence study of variation of defects in zinc oxide during ion implant and after annealing

Chang-Wei Luo1, Meng-Lin Qiu1、*, Guang-Fu Wang1,2、*, Ting-Shun Wang1, Guo-Qiang Zhao1, and Qing-Song Hua1
Author Affiliations
  • 1Key Laboratory of Beam Technology of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China
  • 2Beijing Radiation Center, Beijing 100875, China
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    Figures & Tables(8)
    Schematic of the IBIL experimental setup for high- and low-temperature applications.
    The Normalized IBIL spectra of ZnO at various fluences at room temperature.
    The Normalized IBIL of the sample with irradiation by 2 MeV H+ and annealing at 473 K.
    The Normalized IBIL of the sample with irradiation by 2 MeV H+ and annealing at 800 K.
    Evolutions of the luminescence peak intensitiesof NBE with the irradiation fluence at annealingtemperatures of 473 K and 800 K for irradiated samples.
    The Normalized IBIL of the sample with annealing at 473 K in vacuum for 3 h.
    The Normalized IBIL of the sample annealed at 473 K in vacuum for 3 h was irradiated by 2 MeV H+, and then was annealed at 800 K in vacuum in vacuum for 3 h.
    Evolutions of the luminescence peak intensities of NBE with the irradiation fluence at annealing temperatures of 473 K for virgin samples and annealing temperature of 800 K for irradiated samples which has been annealed at 473 K.
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    Chang-Wei Luo, Meng-Lin Qiu, Guang-Fu Wang, Ting-Shun Wang, Guo-Qiang Zhao, Qing-Song Hua. Ions beam induced luminescence study of variation of defects in zinc oxide during ion implant and after annealing[J]. Acta Physica Sinica, 2020, 69(10): 102901-1

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    Paper Information

    Received: Jan. 6, 2020

    Accepted: --

    Published Online: Nov. 30, 2020

    The Author Email: Wang Guang-Fu (88088@bnu.edu.cn)

    DOI:10.7498/aps.69.20200029

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