Photonics Research, Volume. 8, Issue 4, 457(2020)

Optimizing an interleaved p-n junction to reduce energy dissipation in silicon slow-light modulators

Marco Passoni1, Dario Gerace1, Liam O’Faolain2,3, and Lucio Claudio Andreani1,4、*
Author Affiliations
  • 1Department of Physics, University of Pavia, 27100 Pavia, Italy
  • 2Centre for Advanced Photonics and Process Analysis, Cork Institute of Technology, Cork, Ireland
  • 3Tyndall National Institute, Cork, Ireland
  • 4Institute for Photonics and Nanotechnologies (IFN)-CNR, 20133 Milano, Italy
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    References(56)

    [8] L. Chrostowski, M. Hochberg. Silicon Photonics Design: From Devices to Systems(2015).

    [13] A. Zanzi, A. Rosa, A. Oriol, P. Sanchis, J. Marti, A. Brimont. Advanced high speed slow-light silicon modulators in the O-band for low power optical interconnects in data centers. 14th International Conference on Group IV Photonics, 149-150(2017).

    [14] R. Hosseini, A. Khachaturian, M. Cătuneanu, P. P. Khial, R. Fatemi, A. Hajimiri, K. Jamshidi. Compact, high extinction ratio silicon Mach-Zehnder modulator with corrugated waveguides. Conference on Lasers and Electro-Optics, SM3B.6(2018).

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    Marco Passoni, Dario Gerace, Liam O’Faolain, Lucio Claudio Andreani. Optimizing an interleaved p-n junction to reduce energy dissipation in silicon slow-light modulators[J]. Photonics Research, 2020, 8(4): 457

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    Paper Information

    Category: Silicon Photonics

    Received: Nov. 11, 2019

    Accepted: Jan. 12, 2020

    Published Online: Mar. 12, 2020

    The Author Email: Lucio Claudio Andreani (lucio.andreani@unipv.it)

    DOI:10.1364/PRJ.382620

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