Fig. 1. The diagram of n⁺-n^--p structure

Fig. 2. Junction drive-in results under different temperature

Fig. 3. Simulated dark current under different temperature and light current of HOT structure device

Fig. 4. The diagram of passivation structure with composition gradient

Fig. 5. Performance histogram of MWIR n-on-p HgCdTe focal plane arrays at 80K (a) histogram of response，(b) histogram of NETD

Fig. 6. response and noise result of the device at different operating temperature (a) Response and photoelectrons calculation，(b) Noise

Fig. 7. Dark current graph of the device at different operating temperature

Fig. 8. NETD graph of the device at different operating temperature

Fig. 9. Operability graph of the device at different operating temperature

Fig. 10. Image picture of 320×256 MWIR focal plane arrays at different operating temperature