Microelectronics, Volume. 52, Issue 6, 981(2022)

A High Speed High Reliability and Low Power Level Shifter

LIU Yuanyuan1...2, LIN Zhiyi1,2, QIN Yao1,2, WU Zhijiu1,2, MING Xin1,2, and ZHANG Bo12 |Show fewer author(s)
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  • 2[in Chinese]
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    References(9)

    [1] [1] KE X, SANKMAN J, SONG M K, et al. A 3-to-40 V 10-to-30 MHz automotive-use GaN driver with active BST balancing and VSW dual-edge dead-time modulation achieving 8.3% efficiency improvement and 3.4 ns constant propagation delay [C]// IEEE ISSCC. San Francisco, CA, USA. 2016: 302-304.

    [2] [2] LIU D, HOLLIS S J, DYMOND H C P, et al. Design of 370-ps delay floating-voltage level shifters with 30-V/ns power supply slew tolerance [J]. IEEE Trans Circ Syst II: Express Briefs, 2016, 63(7): 688-692.

    [3] [3] LIU Z, CONG L, LEE H. Design of on-chip gate drivers with power-efficient high-speed level shifting and dynamic timing control for high-voltage synchronous switching power converters [J]. IEEE J Sol Sta Circ, 2015, 50(6): 1463-1477.

    [4] [4] KE X, SANKMAN J, CHEN Y, et al. A tri-slope gate driving GaN DC-DC converter with spurious noise compression and ringing suppression for automotive applications [J]. IEEE J Sol Sta Circ, 2018, 53(1): 247-260.

    [5] [5] SONG M K, CHEN L, SANKMAN J, et al. A 20 V 8.4 W 20 MHz four-phase GaN DC-DC converter with fully on-chip dual-SR bootstrapped GaN FET driver achieving 4 ns constant propagation delay and 1 ns switching rise time [C]// IEEE ISSCC. San Francisco, CA, USA. 2015: 1-3.

    [6] [6] LIU D, HOLLIS S J, STARK B H. A new design technique for sub-nanosecond delay and 200 V/ns power supply slew-tolerant floating voltage level shifters for GaN SMPS [J]. IEEE Trans Circ Syst I: Regular Papers, 2019, 66(3): 1280-1290.

    [7] [7] JONES E A, WANG F F, COSTINETT D. Review of commercial GaN power devices and GaN-based converter design challenges [J]. IEEE J Emerg Selected Topics Power Electronics, 2016, 4(3): 707-719.

    [8] [8] YUAN B, YING J, NG W T, et al. A high-voltage DC-DC buck converter with dynamic level shifter for bootstrapped high-side gate driver and diode emulator [J]. IEEE Trans Power Elec, 2020, 35(7): 7295-7304.

    [9] [9] MING X, ZHANG X, ZHANG Z W, et al. A high-voltage half-bridge gate drive circuit for GaN devices with high-speed low-power and high-noise- immunity level shifter [C]// IEEE 30th ISPSD. Chicago, IL, USA. 2018: 355-358.

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    LIU Yuanyuan, LIN Zhiyi, QIN Yao, WU Zhijiu, MING Xin, ZHANG Bo. A High Speed High Reliability and Low Power Level Shifter[J]. Microelectronics, 2022, 52(6): 981

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    Paper Information

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    Received: Nov. 26, 2021

    Accepted: --

    Published Online: Mar. 11, 2023

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.210460

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