Journal of Semiconductors, Volume. 43, Issue 10, 102002(2022)

Synthesis and electromagnetic transport of large-area 2D WTe2 thin film

Yumeng Zhang1,2, Zhejia Wang3,4, Jiaheng Feng3,4, Shuaiqiang Ming1,3, Furong Qu1,2、*, Yang Xia1,2, Meng He1, Zhimin Hu1,2, and Jing Wang5
Author Affiliations
  • 1Institute of Microelectronics of the Chinese Academy of Sciences, Beijing100029, China
  • 2University of Chinese Academy of Sciences, Beijing100049, China
  • 3Jiaxing Microelectronics Instrument and Equipment Engineering Center of the Chinese Academy of Sciences, Jiaxing 314000, China
  • 4Jiaxing Kemin Electronic Equipment Technology Co., Ltd., Jiaxing 314000, China
  • 5Institute of Physics of the Chinese Academy of Sciences, Beijing100190, China
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    Figures & Tables(6)
    (Color online) (a) Schematic diagram of ALD device. (b) Schematic diagram of CVD device.
    (Color online) (a) SEM image of cross section of tungsten thin film. (b) The XPS pattern of tungsten thin film. (c) The photo of tungsten film.
    (Color online) (a) Raman spectrum at different telluride temperatures. (b) Te : W ratio-temperature curves in EDS results
    (a–d) XRD curves of telluride temperature at 470, 550, 560 and 580 °C. (e) FWHM of WTe2(002) at 470, 550, 560 and 580 °C.
    (Color online) (a) The XPS curve of the sample at 550°C. (b) The schematic diagram of oxidation principle. (c) The oxidation principle diagram.
    (Color online) (a)R–T curve and (b) MR curve of tungsten telluride thin films at 550 °C tellurization temperature.
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    Yumeng Zhang, Zhejia Wang, Jiaheng Feng, Shuaiqiang Ming, Furong Qu, Yang Xia, Meng He, Zhimin Hu, Jing Wang. Synthesis and electromagnetic transport of large-area 2D WTe2 thin film[J]. Journal of Semiconductors, 2022, 43(10): 102002

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    Paper Information

    Category: Articles

    Received: May. 29, 2022

    Accepted: --

    Published Online: Nov. 18, 2022

    The Author Email: Qu Furong (qufurong@ime.ac.cn)

    DOI:10.1088/1674-4926/43/10/102002

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