Laser & Optoelectronics Progress, Volume. 56, Issue 13, 131402(2019)

Laser Single-Mode Characteristics of InGaAs/GaAs/InGaP Quantum Well Lasers

Yu Tang1,2, Chunfang Cao1, Xuyi Zhao1, jin Yang3, jinyou Li3, Qian Gong1,2、*, and Hailong Wang3、**
Author Affiliations
  • 1 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
  • 2 University of Chinese Academy of Sciences, Beijing 100049, China
  • 3 Shandong Provincial Key Laboratory of Laser Polarization and Information Technology, School of Physics and Physical Engineering, Qufu Normal University, Qufu, Shandong 273165, China
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    Figures & Tables(5)
    Electrofluorescence emission spectrum of laser at 20 ℃ in continuous wave mode with 20 mA injection current
    Lasing spectrum of laser at 20 ℃ in continuous wave mode with different injection currents
    Wavelength of single-mode peak as a function of injection current
    Lasing spectra of quantum well laser with different injection currents under continuous wave mode at 20 ℃. (a) 40-58 mA; (b) 40-42 mA
    Output power as a function of injection current of quantum well laser under continuous wave mode at 20 ℃. Inset shows SMSR as function of wavelength with 62 mA injection current
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    Yu Tang, Chunfang Cao, Xuyi Zhao, jin Yang, jinyou Li, Qian Gong, Hailong Wang. Laser Single-Mode Characteristics of InGaAs/GaAs/InGaP Quantum Well Lasers[J]. Laser & Optoelectronics Progress, 2019, 56(13): 131402

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    Paper Information

    Category: Lasers and Laser Optics

    Received: Jan. 9, 2019

    Accepted: Jan. 28, 2019

    Published Online: Jul. 11, 2019

    The Author Email: Gong Qian (qgong@mail.sim.ac.cn), Wang Hailong (phyhlwang71@126.com)

    DOI:10.3788/LOP56.131402

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