Chinese Journal of Quantum Electronics, Volume. 26, Issue 1, 1(2009)

Progress of enhanced emission of light-emitting diode using surface plasmons

Jie YAN1,2、*, Pei WANG1, Yong-hua LU1,2, Rong-sheng ZHENG1,2, Zhi-guo XIE1, Jun-xue CHEN1, Guanghui YUAN1, and Hai MING1
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    References(26)

    [1] [1] Fred S E. Light-Emitting Diodes [M]. Cambridge, U. K.: Cambridge Univ. Press.

    [2] [2] Zukauskas A, Shur M S, Gaska R. Introduction to Solid-State Light [M]. New York: Wiley.

    [3] [3] Koike M, Shibata N, Kato H, et al. Development of high efficiency GaN-based multiquantum-well lightemitting diodes and their applications [J]. IEEE J. Sel. Topics Quantum Electron., 2002, 8(2):271-277.

    [4] [4] Craford M G. In High Brightness Light Emitting Diodes [M]. (Eds: G. B. Stringfellow, M. G. Craford), Academic, San Diego, CA 1997. 47.

    [5] [5] Krames M R, Ochiai-Holcomb M, H fler G E, et al. High-power truncated-inverted-pyramid (Al Ga) In P/GaP light-emitting diodes exhibiting >50% external quantum efficiency [J]. Appl. Phys. Lett., 1999, 75: 2365-2367.

    [6] [6] Lee Y J, Tseng H C, Kuo H C, et al. Improvement in light-output efficiency of alGaInP LEDs fabricated on stripe patterned epitaxy [J]. IEEE Photon. Technol. Lett., 2005, 17(12): 2532-2534.

    [7] [7] Fujii T, Gao Y, Sharma R, et al. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening [J]. Appl. Phys. Lett., 2004, 84: 855-855.

    [8] [8] Ryu Han-youl, Hwang Jeong-Ki, Lee Yong-Jae. Enhancement of light extraction from two-dimensional photonic crystal slab structures [J]. IEEE J. Quantum Electron., 2002, 8(2): 231-237.

    [9] [9] Barnes W L. Electromagnetic crystals for surface plasmon polaritons and the extraction of light from emissive devices [J]. IEEE Lightwave Technology, 1999, 17(11): 2170-2182.

    [10] [10] Barnes W L, Dereux A, Ebbesen T W. Surface plasmon subwavelength optics [J]. Nature, 2003, 424(14): 824-830.

    [11] [11] Purcell E M. Spontaneous emission probabilities at radio frequencies [J]. Phys. Rev., 1946, 69: 681–681.

    [12] [12] K ck A, Gornik, Hauser M. Strongly directional emission from AlGaAs/GaAs light-emitting diodes [J]. Appl. Phys. Lett., 1990, 57(22): 2327-2329.

    [13] [13] Gontijo I, Boroditsky M, Yablonovitch E. Coupling of InGaN quantum-well photoluminescence to silver surface plasmons [J]. Phys. Rev. B, 1999, 60(16): 11564-11567.

    [14] [14] Neal Terrell D, Okamoto Koichi, Scherer Axel. Time resolved photoluminescence spectroscopy of surface-plasmon-enhanced light emission from conjugate polymers [J]. Appl. Phys. Lett., 2006, 89(22): 1106.

    [15] [15] Maier Stefan A. Plasmonics:Fundamentals and Applications [M]. Springer, 2007.

    [16] [16] Barnes William L. Turning the tables on surface plasmons [J]. Nature Materials, 2004, 3.

    [17] [17] Okamoto K, Niki I, Scherer A. Surface plasmon enhanced spontaneous emission rate of InGaN/GaN quantum wells probed by time-resolved photoluminescence spectroscopy [J]. Appl. Phys. Lett., 2005, 87(7): 1102.

    [18] [18] Okamoto Koichi, Niki Isamu, Shvartser Alexander. Surface plasmon enhanced bright light emission from InGaN/GaN [J]. Phys. Stat. Sol., 2007, 204(6): 2103-2107.

    [19] [19] Okamoto Koichi, Niki Isamu, Shvartser Alexander. Surface plasmon enhanced light emitters based on InGaN quantum wells [J]. Nature Materials, 2004, 3: 601-605

    [20] [20] Chen C Y, Yeh D M, Lu Y C, et al. Dependence of resonant coupling between surface plasmons and an InGaN quantum well on metallic structure [J]. Appl. Phys. Lett., 2006, 89(20): 3113.

    [21] [21] Hecker N E, Ho R A. Surface plasmon-enhanced photoluminescence from a single quantum well [J]. Appl. Phys. Lett., 1999, 75(11): 13.

    [22] [22] Ye Dongming, Huang Chifeng, Lu Yencheng, et al. Surface plasmon leakage in its coupling with an InGaN/GaN quantum well through an Ohmic contact [J]. Appl. Phys. Lett., 2007, 91(6): 3121.

    [23] [23] Ye Dongming, Huang Chifeng, Chen Chengyen, et al. Surface plasmon coupling effect in an InGaN/GaN single-quantum-well light-emitting diode [J]. Appl. Phys. Lett., 2007, 91(17): 1103.

    [24] [24] Neal Terrell D, Okamoto Koichi, Scherer Axel. Surface plasmon enhanced emission from dye doped polymer layers [J]. Optics Express, 2005, 13(14): 5522-5527

    [25] [25] Hung Yu Ju, Smolyaninov Igor I, Christopher C Davis. Fluorescence enhancement by surface gratings [J]. Optics Express, 2006, 14(22): 10825-10830.

    [26] [26] Sun Greg, Khurgin Jacob B, Soref Richard A. Practicable enhancement of spontaneous emission using surface plasmons [J]. Appl. Phys. Lett., 2007, 90(11): 1107.

    CLP Journals

    [1] Zhang Haosu, Zhu Jun, Zhu Zhendong, Li Qunqing, Jin Guofan. Bottom-Emitting Surface-Plasmon-Enhanced GaN-LED Based on the Sinusoidal Nano-Gratings[J]. Laser & Optoelectronics Progress, 2013, 50(4): 42302

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    YAN Jie, WANG Pei, LU Yong-hua, ZHENG Rong-sheng, XIE Zhi-guo, CHEN Jun-xue, YUAN Guanghui, MING Hai. Progress of enhanced emission of light-emitting diode using surface plasmons[J]. Chinese Journal of Quantum Electronics, 2009, 26(1): 1

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    Paper Information

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    Received: Apr. 3, 2008

    Accepted: --

    Published Online: May. 24, 2010

    The Author Email: Jie YAN (yanj@mail.ustc.edu.cn)

    DOI:

    CSTR:32186.14.

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