Chinese Optics Letters, Volume. 15, Issue 8, 081601(2017)

Energy transfer between Ce3+ and Sm3+ in Zn2GeO4 phosphor with the native defects for light-emitting diodes

Yushuang Qi1, Lei Zhao2, Wenjuan Bian1, Xue Yu1,3、*, Xuhui Xu1,3, and Jianbei Qiu1,3
Author Affiliations
  • 1College of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China
  • 2Department of Physics and Information Technology, Baoji University of Arts and Sciences, Baoji 721016, China
  • 3Key Laboratory of Advanced Materials of Yunnan Province, Kunming 650093, China
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    Figures & Tables(8)
    (a) XRD patterns of Zn1.99GeO4:0.01Sm3+, Zn1.96GeO4:0.04Ce3+, Zn1.95GeO4:0.04Ce3+, 0.01Sm3+, and the JCPDS card of Zn2GeO4 (No.11-0687), (b) XPS of Zn1.96GeO4:0.04Ce3+, and the inset is the enlargement of the XPS spectrum from 860 to 900 eV.
    (a) PLE and PL spectra of Zn2GeO4, (b) Zn1.99GeO4:0.01Sm3+, (c) Zn1.96GeO4:0.04Ce3+, and (d) Zn1.95GeO4:0.04Ce3+, 0.01Sm3+ samples, respectively.
    (Color online) PLE spectrum of Zn1.99GeO4:0.01Sm3+ (black) and PL spectrum of Zn1.96GeO4:0.04Ce3+ (red).
    PL spectra of Zn1.99−xGeO4:xCe3+, 0.01Sm3+ (x=0.00, 0.01, 0.02, 0.03, 0.04, and 0.05) samples.
    Decay curves of Zn1.96−yGeO4:0.04Ce3+, ySm3+ (y=0.00, 0.005, 0.03, and 0.07) monitored the 446 nm emission under 365 nm excitation.
    CIE chromaticity diagram of Zn1.96GeO4:0.04Ce3+ and Zn1.93GeO4:0.04Ce3+, 0.03Sm3+ phosphors.
    Dependence of Is0/Is of Ce3+ on C6/3, C8/3, and C10/3.
    • Table 1. Decay Kinetics for Zn1.96−yGeO4:0.04Ce3+, ySm3+ (y=0.00, 0.005, 0.03, and 0.07) Phosphors

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      Table 1. Decay Kinetics for Zn1.96−yGeO4:0.04Ce3+, ySm3+ (y=0.00, 0.005, 0.03, and 0.07) Phosphors

      τ1 (ns)A1τ2 (ns)A2
      1.45591142.54313.207911.988
      1.25941178.25613.17239.651
      1.27631147.68211.59378.7932
      1.4221243.26811.27649.143
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    Yushuang Qi, Lei Zhao, Wenjuan Bian, Xue Yu, Xuhui Xu, Jianbei Qiu. Energy transfer between Ce3+ and Sm3+ in Zn2GeO4 phosphor with the native defects for light-emitting diodes[J]. Chinese Optics Letters, 2017, 15(8): 081601

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    Paper Information

    Category: Materials

    Received: Apr. 6, 2017

    Accepted: May. 18, 2017

    Published Online: Jul. 20, 2018

    The Author Email: Xue Yu (yuyu6593@126.com)

    DOI:10.3788/COL201715.081601

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