Journal of Terahertz Science and Electronic Information Technology , Volume. 19, Issue 2, 338(2021)
Design of a single event effects hardened input interface circuit
A new input interface circuit with single event effect hardened is proposed, which adopts the scheme of combinational logic operating after delay-processing. This circuit is designed and implemented in 0.8 μm 600 V Bipolar-CMOS-DMOS(BCD) process of Communication Mode Selector Control(CMSC). The single event radiation experiment has been completed in National Space Science Center. The results of simulation and test show that the circuit proposed in this paper can effectively immune to Single Event Upset(SEU) whose Linear Energy Transfer(LET) is under 80 MeV·cm2/mg. Especially for the case that multiple nodes occurring upset at the same time, the proposed circuit has high capacity of SEU–tolerant.
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GUAN Xiaoming, FANG Jian, LAI Rongxing, LUO Yunzhong. Design of a single event effects hardened input interface circuit[J]. Journal of Terahertz Science and Electronic Information Technology , 2021, 19(2): 338
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Received: Dec. 9, 2019
Accepted: --
Published Online: Jul. 16, 2021
The Author Email: Xiaoming GUAN (523557479@qq.com)