[2] [2] Manasevit H M. Recollections and reflections of MO-CVD［J］.Journal of Crystal Growth,1981,55(1): 1-9.

[3] [3] Keller S, Denbaars S P. Metalorganic chemical vapor deposition of group III nitrides-a discussion of critical issues［J］.Journal of Crystal Growth,2003,248: 479-486．

[4] [4] Mihopoulos T G, Gupta V, Jensen K F. A reaction-transport model for AlGaN MOVPE growth［J］.Journal of Crystal Growth,1998,195(1): 733-739.

[5] [5] Yakovlev E V, Talalaev R A, Kaluza N, et al. Influence of the reactor inlet configuration on the AlGaN growth efficiency［J］.Journal of Crystal Growth,2007,298: 413-417.

[6] [6] Creighton J R, Wang G T, Coltrin M E. Fundamental chemistry and modeling of group-III nitride MOVPE［J］.Journal of Crystal Growth,2007,298: 2-7.

[7] [7] Lobanova A V, Mazaev K M, Talalaev R A, et al. Effect of V/III ratio in AlN and AlGaN MOVPE［J］.Journal of Crystal Growth,2006,287(2): 601-604.

[8] [8] Zubialevich V Z, Pampili P, Parbrook P J. Fast growth of smooth AlN in a 3 × 2″ showerhead-type vertical flow MOVPE reactor［J］. Physica Status Solidi (b), 2018,255(5): 1-6.

[9] [9] Han J, Figiel J J, Crawford M H, et al. OMVPE growth and gas-phase reactions of AlGaN for UV emitters［J］.Journal of Crystal Growth,1998,195(1): 291-296.

[10] [10] Choi S C, Kim J H, Choi J Y, et al. Al concentration control of epitaxial AlGaN alloys and interface control of GaN/AlGaN quantum well structures［J］.Journal of Applied Physics,2000,87(1): 172-176.

[11] [11] Chen C H, Liu H, Steigerwald D, et al. A study of parasitic reactions between NH3 and TMGa or TMAl［J］.Journal of Electronic Materials,1996,25(6): 1004-1008.

[12] [12] Lundin W V, Nikolaev A E, Sakharov A V, et al. High growth rate of AlN in a planetary MOVPE reactor［J］.Technical Physics Letters,2010,36(12): 1133-1135.

[13] [13] Lundin W V, Nikolaev A E, Rozhavskaya M M, et al. Fast AlGaN growth in a whole composition range in planetary reactor［J］.Journal of Crystal Growth,2013,370: 7-11.

[14] [14] Dauelsberg M, Brien D, Rauf H, et al. On mechanisms governing AlN and AlGaN growth rate and composition in large substrate size planetary MOVPE reactors［J］.Journal of Crystal Growth,2014,393: 103-107.

[15] [15] Dauelsberg M, Martin C, Protzmann H, et al. Modeling and process design of III-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactors［J］.Journal of Crystal Growth,2007,298: 418-424.

[16] [16] Lundin W V, Nikolaev A E, Yagovkina M A, et al. High growth rate MOVPE of Al(Ga)N in planetary reactor［J］.Journal of Crystal Growth,2012,352(1): 209-213.