Research on laser-induced damage of silicon-on-insulator (SOI) material is quite important for applications of optical devices based on this material. Irradiation experiment is performed on SOI material with 1064 nm pulsed laser. For pulse width of 190 ps and 280 μs,the laser-induced damage threshold values are measured to be 2.5 and 19.8 J/cm2,respectively. Damage patterns induced by the two pulse lasers are also different from each other. According to the experimental results,the temperature distributions in the SOI material after laser pulse duration are simulated by a finite element analysis method with the ANSYS heat analysis module. Based on observation to the damage morphologies,the laser-induced damage mechanism of SOI material is discussed.