Fig. 1. (a) Schematic of the waveguide fabrication steps with different layers. (b) Schematic of the waveguide cross section. (c) SEM image of the waveguide.

Fig. 2. (a) Calculated dispersion and effective index of the waveguide for the fundamental TE mode. (b) and (c) The mode profile at 1550 nm of the waveguide with and without tellurium oxide, respectively.

Fig. 3. Experimental supercontinuum and third-harmonic generation spectra with an image of the third-harmonic generation along the length of the waveguide (inset). The vertical axis is on-chip power, and the dashed curve is the simulated spectrum shifted down for clarity.

Fig. 4. (a) and (b) The supercontinuum and third-harmonic generation spectra at different pump powers. (c) Optical images, taken with a CMOS camera, of third-harmonic generation at different pump wavelengths with signal color of green (pump at 1600 nm), cyan (pump at 1550 nm), and blue (pump at 1460 nm). The input is at the left side of the images. The third-harmonic signal had larger scattering for the 1550 nm pump (inset), as the pump power was higher than for the others.

Fig. 5. (a) Calculated anomalous dispersion of the waveguide and the mode profile for the fundamental TE mode (inset). Energy confined in silicon nitride is ∼30%. (b) Calculated supercontinuum generation along with the spectrogram (inset) for a 1 cm long waveguide at 1 kW of pump power at 1550 nm.