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Acta Photonica Sinica, Volume. 47, Issue 5, 523001(2018)

Using Etch Well to Suppress Edge Breakdown of Planar-type InGaAs/InP Geiger Mode Avalanche Photodiodes

HOU Li-li1、*, HAN Qin1,2, LI Bin3, WANG Shuai1, and YE Han1
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    HOU Li-li, HAN Qin, LI Bin, WANG Shuai, YE Han. Using Etch Well to Suppress Edge Breakdown of Planar-type InGaAs/InP Geiger Mode Avalanche Photodiodes[J]. Acta Photonica Sinica, 2018, 47(5): 523001

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    Paper Information

    Received: Dec. 14, 2017

    Accepted: --

    Published Online: Sep. 7, 2018

    The Author Email: Li-li HOU (houlili@semi.ac.cn)

    DOI:10.3788/gzxb20184705.0523001

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology