Chinese Journal of Quantum Electronics, Volume. 21, Issue 3, 381(2004)

Electrical measurement and simulation of Si/Si bonding structure

[in Chinese]*... [in Chinese] and [in Chinese] |Show fewer author(s)
Author Affiliations
  • [in Chinese]
  • show less
    References(3)

    [1] [1] Reznicek A,Senz S,Breitenstein O.Electrical characterization of UHV-bonded silicon interfaces [OL].Proceedings of MRS Online Pablications(www.mrs.org),681E:I44.

    [2] [2] Fedotov A,Saad A M H,Enisherlova K,et al.Electrical properties of Si/SiO2/Si structures produced by direct bonding of pre-oxidized silicon wafers [J].Microelectronic Engineering,2003,66:522-529.

    [4] [4] Depas M,Vermeire B,et al.Determination of tunnelling parameters in ultra-thin oxide layer poly-Si/SiO2/Sistructures [J].Solid-state Electronics,1995,38(8):1465-1471.

    Tools

    Get Citation

    Copy Citation Text

    [in Chinese], [in Chinese], [in Chinese]. Electrical measurement and simulation of Si/Si bonding structure[J]. Chinese Journal of Quantum Electronics, 2004, 21(3): 381

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Aug. 21, 2003

    Accepted: --

    Published Online: May. 15, 2006

    The Author Email: ( sychen@jingxian.xmu.edu.c)

    DOI:

    Topics