Chinese Journal of Quantum Electronics, Volume. 21, Issue 3, 381(2004)

Electrical measurement and simulation of Si/Si bonding structure

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    Understanding of electrical performance for Si/Si bonding structure is of great importance for both study of interface and fabrication of micro-electronic elements. We firstly analyzed I-V performance for different Si/Si bonding structures, and then using SOS model made capacitance curve-fitting for n-Si/n-Si structure. Comparing theoretical curve with experimental data, we got shifting voltage VFB and interfacial states density Din. These results availed to study the interface of silicon bonding structure.

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    [in Chinese], [in Chinese], [in Chinese]. Electrical measurement and simulation of Si/Si bonding structure[J]. Chinese Journal of Quantum Electronics, 2004, 21(3): 381

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    Paper Information

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    Received: Aug. 21, 2003

    Accepted: --

    Published Online: May. 15, 2006

    The Author Email: ( sychen@jingxian.xmu.edu.c)

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