Chinese Journal of Quantum Electronics, Volume. 21, Issue 3, 381(2004)
Electrical measurement and simulation of Si/Si bonding structure
Understanding of electrical performance for Si/Si bonding structure is of great importance for both study of interface and fabrication of micro-electronic elements. We firstly analyzed I-V performance for different Si/Si bonding structures, and then using SOS model made capacitance curve-fitting for n-Si/n-Si structure. Comparing theoretical curve with experimental data, we got shifting voltage VFB and interfacial states density Din. These results availed to study the interface of silicon bonding structure.
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[in Chinese], [in Chinese], [in Chinese]. Electrical measurement and simulation of Si/Si bonding structure[J]. Chinese Journal of Quantum Electronics, 2004, 21(3): 381