[1] [1] Buscema M, Groenendijk D J, Blanter S I, et al. Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors［J］. Nano Lett., 2014, 14(6): 3347-3352.

[2] [2] Liu C H, Chang Y C, Norris T B, et al. Graphene photodetectors with ultra-broadband and high responsivity at room temperature［J］. Nat. Nanotechnol., 2014, 9(4): 273-278.

[3] [3] Bao Q, Loh K P. Graphene photonics, plasmonics, and broadband optoelectronic devices［J］. ACS Nano., 2012, 6(5): 3677-3694.

[4] [4] Tong T, Chen Y, Qin S, et al. Sensitive and ultrabroadband phototransistor based on two-dimensional Bi2O2Se nanosheets［J］. Adv. Functional Materials, 2019, 29(50).

[5] [5] Wang X, Wang P, Wang J, et al. Ultrasensitive and broadband MoS2 photodetector driven by ferroelectrics［J］. Adv. Mater., 2015, 27(42): 6575-6581.

[6] [6] Zhao Y, Ren Y, Coileáin C , et al. High response and broadband photodetection by monolayer MoSe2 with vanadium doping and Mo vacancies［J］. Appl. Surface Science, 2021, 564: 150399.

[8] [8] Peng M, Wang Y, Shen Q, et al. High-performance flexible and broadband photodetectors based on PbS quantum dots/ZnO nanoparticles heterostructure［J］. Science China Materials, 2018, 62(2): 225-235.

[9] [9] Manzeli S, Ovchinnikov D, Pasquier D, et al. 2D transition metal dichalcogenides［J］. Nature Reviews Materials, 2017, 2(8): 17033.

[10] [10] Khan U, Luo Y, Tang L, et al. Controlled vapor-solid deposition of millimeter-size single crystal 2D Bi2O2Se for high-performance phototransistors［J］. Adv. Functional Materials, 2019, 29(14): 1807979-1-9.

[11] [11] Wu J, Liu Y, Tan Z, et al. Chemical patterning of high-mobility semiconducting 2D Bi2O2Se crystals for integrated optoelectronic devices［J］. Adv. Mater., 2017, 29(44): 1704060-1-6.

[12] [12] Wu J, Tan C, Tan Z, et al. Controlled synthesis of high-mobility atomically thin bismuth oxyselenide crystals［J］. Nano Lett., 2017, 17(5): 3021-3026.

[13] [13] Ruleova P, Drasar C, Lostak P, et al. Thermoelectric properties of Bi2O2Se［J］. Materials Chemistry and Physics, 2010, 119(1/2): 299-302.

[14] [14] Zhang K, Hu C, Kang X, et al. Synthesis and thermoelectric properties of Bi2O2Se nanosheets［J］. Materials Research Bulletin, 2013, 48(10): 3968-3972.

[15] [15] Quhe R, Liu J, Wu J, et al. High-performance sub-10nm monolayer Bi2O2Se transistors［J］. Nanoscale, 2019, 11(2): 532-540.

[16] [16] Tan C, Tang M, Wu J, et al. Wafer-scale growth of single-crystal 2D semiconductor on perovskite oxides for high-performance transistors［J］. Nano Lett., 2019, 19(3): 2148-2153.

[17] [17] Wu J, Qiu C, Fu H, et al. Low residual carrier concentration and high mobility in 2D semiconducting Bi2O2Se［J］. Nano Lett., 2019, 19(1): 197-202.

[18] [18] ChengChen M W, Wu Jinxiong, Fu Huixia, et al. Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi2O2Se［J］. Sci. Adv., 2018, 4(9): eaat8355.

[19] [19] Yin J, Tan Z, Hong H, et al. Ultrafast and highly sensitive infrared photodetectors based on two-dimensional oxyselenide crystals［J］. Nat. Commun., 2018, 9(1): 3311.

[20] [20] Ding D, Jiang Z, Ji D, et al. Bi2O2Se as a novel co-catalyst for photocatalytic hydrogen evolution reaction［J］. Chemical Engineering J., 2020, 400: 125931.

[21] [21] Li M Q, Dang L Y, Wang G G, et al. Bismuth oxychalcogenide nanosheet: Facile synthesis, characterization, and photodetector application［J］. Adv. Materials Technologies, 2020, 5(7): 202000180.

[22] [22] Yang H, Chen W, Zheng X, et al. Near-infrared photoelectric properties of multilayer Bi2O2Se nanofilms［J］. Nanoscale Res. Lett., 2019, 14(1): 371.