Microelectronics, Volume. 53, Issue 3, 458(2023)
The Design of a Radiation Hardened 16-bit 80-MSPS A/D Converter
[1] [1] ZANCHI A, HOLMEN M C, YAO M, et al. Total ionizing dose characterization of an 8-bit 200-MSps switched-capacitor pipeline A-to-D converter in 32 nm SOI CMOS [C] // IEEE Radiation Effects Data Workshop. Portland, OR, USA. 2016: 1-6.
[2] [2] ADELL P C, YAGER J, PANNELL Z, et al. Radiation hardening of an SiGe BiCMOS Wilkinson ADC for distributed motor controller application [J]. IEEE Trans Nucl Sci, 2014, 61(3): 1236-1242.
[3] [3] KIM T H, LEE H C. Total ionizing dose effects on a 12-bit 40 kS/s SAR ADC designed with a dummy gate-assisted n-MOSFET [J]. IEEE Trans Nucl Sci, 2017, 64(1): 648-653.
[4] [4] ZANCHI A, HISANO S, HAFER C, et al. Total ionizing dose and single event latch-up characterization of a 16-bit A-to-D converter fabircated in 018μm triple-well cmos process [C] // IEEE Radiation Effects Data Workshop. Miami, FL, USA. 2012: 1-8.
[5] [5] LEWIS S H. Optimizing the stage resolution in pipelined, multistage, analog-to-digital converters for video-rate applications [J]. IEEE Trans Circ Syst II: Reg Papers, 1992, 39(8): 516-523.
[6] [6] LI T, LIU L, WANG Y, et al. Power optimization in pipeline analog-to-digital converters [C] // Anti-counterfeiting, Security, and Identification. Taipei, China. 2012: 1-5.
[7] [7] ALI A M A, DILLON C, SNEED R, et al, A 14-bit 125 MSPS IF/RF sampling pipelined ADC with 100 dB SFDR and 50 fs jitter [J]. IEEE J Sol Sta Circ, 2006, 41(8): 1846-1855.
[8] [8] DEVARAJAN S, SINGER L, KELLY D, et al. A 16-bit, 125 MSPS, 385 mW, 787 dB SNR CMOS pipeline ADC [J]. IEEE J Sol Sta Circ, 2009, 44(12): 3305-3313.
[9] [9] GRAY P R, MEYER R G. MOS operational amplifier design-a tutorial overview [J]. IEEE J Sol Sta Circ, 1982, 17(6): 969-982.
[11] [11] BARNABY H J. Total-ionizing-dose effects in modern CMOS technologies [J]. IEEE Trans Nucl Sci, 2006, 53(6): 3013-3121.
[12] [12] ESQUEDA I S, BARNABY H J, KING M P. Compact modeling of total ionizing dose and aging effects in MOS technologies [J]. IEEE Trans Nucl Sci, 2015, 62(4): 1501-1515.
[13] [13] BRUGUIER G, PALAU J M. Single particle-induced latchup [J]. IEEE Trans Nucl Sci, 1996, 43(2): 522-532.
[14] [14] YOUSSEF A A, ARTOLA L, DUCRET S, et al. Compact modeling of single-event latchup of integrated CMOS circuit [J]. IEEE Trans Nucl Sci, 2019, 66(7): 1510-1515.
Get Citation
Copy Citation Text
WANG Xu, LIU Tao, DENG Minming. The Design of a Radiation Hardened 16-bit 80-MSPS A/D Converter[J]. Microelectronics, 2023, 53(3): 458
Category:
Received: Apr. 6, 2023
Accepted: --
Published Online: Jan. 3, 2024
The Author Email: