[1] J ZHANG, M A ITZLER, H ZBINDEN et al. Advances in InGaAs/InP single-photon detector systems for quantum communication. Light: Science & Applications, 4, 381-393(2015).

[2] M D EISAMAN, J FAN, A MIGDALL et al. Invited review article: single-photon sources and detectors. Review of Scientific Instruments, 82, 202-134(2011).

[3] C BRUSCHINI, H HOMULLE, I M ANTOLOVIC et al. Single-photon avalanche diode imagers in biophotonics:review and outlook. Light: Science & Applications, 8, 409-436(2019).

[4] C YU, J ZHANG, J W PAN et al. Fully integrated free-running InGaAs/InP single-photon detector for accurate lidar applications. Optics Express, 25, 14611-14620(2017).

[5] B F AULL, A H LOOMIS, D J YOUNG et al. Three-dimensional imaging with arrays of Geiger-mode avalanche photodiodes, 105-116(2004).

[6] F ACERBI, M ANTI, A TOSI et al. Design criteria for InGaAs/InP single-photon avalanche diode. IEEE Photonics Journal, 5, 6800209(2013).

[7] RUGGERI , ALESSANDRO , SANZARO et al. InGaAs/InP SPAD with monolithically integrated zinc-diffused resistor. IEEE Journal of Quantum Electronics, 52, 1-7(2016).

[8] S WANG, H YE, F XIAO et al. Design, fabrication, and characteristic analysis of 64 × 64 InGaAs/InP single-photon avalanche diode array. Journal of Electronic Materials, 51, 2692-2697(2022).

[9] Weida HU, Qing LI, Jie WEN et al. Research status and progress of InGaAs/InP infrared avalanche photodetector. Infrared Technique, 40, 201-208(2018).

[10] Kaibao LIU, Xiaohong YANG, Tingting HE et al. InP based near-infrared single photon avalanche photodetector array. Laser & Optoelectronics Progress, 56, 220001(2019).

[11] K NISHIDA, K TAGUCHI, Y MATSUMOTO. InGaAsP heterostructure avalanche photodiodes with high avalanche gain. Applied Physics Letters, 35, 251-253(1979).

[12] Y LIU, S R FORREST, J HLADKY et al. A planar InP/InGaAs avalanche photodiode with floating guard ring and double diffused junction. Journal of Lightwave Technology, 10, 182-193(1992).

[13] F SIGNORELLI, F TELESCA, E CONCA et al. Low-noise InGaAs/InP single-photon avalanche diodes for fiber-based and free-space applications. IEEE Journal of Selected Topics in Quantum Electronics, 28, 1-10(2021).

[14] A TOSI, N CALANDRI, M SANZARO et al. Low-noise, low-jitter, high detection efficiency InGaAs/InP single-photon avalanche diode. IEEE Journal of Selected Topics in Quantum Electronics, 20, 192-197(2014).

[15] S WANG, F MA, X LI et al. Analysis of breakdown probabilities in avalanche photodiodes using a history-dependent analytical model. Applied Physics Letters, 82, 1971-1973(2003).

[16] S L TAN, D S ONG, H K YOW. Theoretical analysis of breakdown probabilities and jitter in single-photon avalanche diodes. Journal of Applied Physics, 102, 1-7(2007).

[17] M A ITZLER, S COVA, A TOSI et al. Single photon avalanche diodes (SPADs) for 1.5 μm photon counting applications. Journal of Modern Optics, 54, 283-304(2007).

[18] J C CAMPBELL, A G DENTAI, W S HOLDEN et al. High-performance avalanche photodiode with separate absorption 'grading and multiplication regions. Electronics Letters, 19, 818-820(1983).

[19] S R FORREST, O K KIM, R G SMITH. Optical response time of In0.53Ga0.47As/InP avalanche photodiodes. Applied Physics Letters, 41, 95-98(1982).

[20] T KNEZEVIC, T SULIGOJ. Examination of the InP/InGaAs single-photon avalanche diodes by establishing a new TCAD-based simulation environment, 57-60(2016).

[21] A G CHYNOWETH. Ionization rates for electrons and holes in silicon. Physical Review, 109, 1537-1540(1958).

[22] L W COOK, G E BULMAN, G E STILLMAN. Electron and hole impact ionization coefficients in InP determined by photomultiplication measurements. Applied Physics Letters, 40, 589-591(1982).

[23] J D PETTICREW, S J DIMLER, C H TAN et al. Modeling temperature-dependent avalanche characteristics of InP. IEEE Journal of Lightwave Technology, 38, 961-965(2020).

[24] SADAO , ADACHI . Optical dispersion relations for GaP, GaAs, GaSb, InP, InAs, InSb, AlxGa1-xAs, and In1-xGaxAsyP1-y. Journal of Applied Physics, 66, 6030-6040(1989).

[25] Y TIAN, Q LI, W Q DING et al. High speed and high sensitivity InGaAs/InAlAs single photon avalanche diodes for photon counting communication. IEEE Journal of Lightwave Technology, 40, 5245-5253(2022).

[26] J P DONNELLY, E K DUERR, K A MCINTOSH et al. Design considerations for 1.06-μm InGaAsP-InP geiger-mode avalanche photodiodes. IEEE Journal of Quantum Electronics, 42, 797-809(2006).

[27] Lili HOU, Qin HAN, Bin LI et al. Edge breakdown suppression of planar InGaAs/InP Geiger mode APDs by etching pits. Acta Photonica Sinica, 47, 0523001(2018).

[28] J AHMED, X YI, X JIN et al. Theoretical analysis of AlAs0.56Sb0.44 single photon avalanche diodes with high breakdown probability. IEEE Journal of Quantum Electronics, 57, 1-6(2021).

[29] MCINTYRE , J ROBERT. On the avalanche initiation probability of avalanche diodes above the breakdown voltage. IEEE Transactions on Electron Devices, 20, 637-641(1973).