Infrared and Laser Engineering, Volume. 53, Issue 3, 20230654(2024)

Research on packaging technology for 40 K dual-band long-wave detectors

Xiaokun Wang1,2, Junlin Chen1,2, Shaobo Luo1,2, Zhijiang Zeng1,2, and Xue Li1,2
Author Affiliations
  • 1State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • 2Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
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    Figures & Tables(19)
    Schematic diagram of chip structure
    Schematic diagram of multi band splicing
    Diagram of Dewar structure
    Schematic diagram of the flatness adjustment mechanism for dual band detectors
    Schematic diagram of three-dimensional adjustment of detector module
    Flow chart of detector module adjustment
    Thermal layer structure design for 40 K temperature zone
    Low temperature stress under different thermal layer structures
    Low temperature stress under different thermal layer structures
    Low temperature stress under different thermal layer structures
    Low temperature deformation of detector diagonal distance
    Temperature gradient verification principle and thermal network model. (a) Temperature gradient verification principle; (b) The figure of thermal network model
    Temperature gradient verification test
    Temperature gradient verification test
    Filter holder support structure and low temperature deformation test of filter. (a) Filter holder support structure; (b) Low temperature deformation testing device for optical filters
    Photo of Dewar
    • Table 1. Material selection for thermal layer structure

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      Table 1. Material selection for thermal layer structure

      1DCold platformSplicing substrateChip electrode plate
      Thermal layer structure IMoMoAl2O3
      Thermal layer structure IIMoMoAlN
      Thermal layer structure IIIMoAlNAl2O3
      Thermal layer structure IVMoAlNAlN
    • Table 2. Packaging structure material parameters

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      Table 2. Packaging structure material parameters

      MaterialAverage coefficient of thermal expansion α(10−6)Elastic modulusE/GPaPoisson's ratioThermal conductivityλ/W·(m·K)−1
      1Mo3.53200.3207.5
      AlN1.83500.2627.6
      Al2O34.03000.2625
      Si2.491120.28128
      T2SL(InAs/GaSb)5630.3148
      QWIP4.1650.335
    • Table 3. Main performance indexes of IRFPA

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      Table 3. Main performance indexes of IRFPA

      ItemValue
      Temperature/KLW1:50LW2:40
      Wave bandLW1:T2SL(4.93-7.21 μm)QWIP(8.97-10.45 μm)LW2:T2SL(7.01-9.21 μm)QWIP(10.25-12.53 μm)
      Temperature difference/K±0.4
      Pixed numberQWIP:320×64 T2SL:320×64
      Pixel size/μm60×60
      PackagingDewar
      Operative pixel percent99.5%
      Responseinhomogeneity10%
      Maximum size/mmΦ76×131
      Adapter coolerSpecial
      Heat load/mW492
      Assembly mass/g521.1
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    Xiaokun Wang, Junlin Chen, Shaobo Luo, Zhijiang Zeng, Xue Li. Research on packaging technology for 40 K dual-band long-wave detectors[J]. Infrared and Laser Engineering, 2024, 53(3): 20230654

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    Paper Information

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    Received: Nov. 22, 2023

    Accepted: --

    Published Online: Jun. 21, 2024

    The Author Email:

    DOI:10.3788/IRLA20230654

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