Acta Physica Sinica, Volume. 68, Issue 19, 196103-1(2019)
Fig. 1. Schematic of In
Fig. 2. (a) Conversion efficiencies and (b) collection efficiencies with various NA+ for In0.2Ga0.8N, In0.4Ga0.6N, In0.6Ga0.4N p-i-n homojunction solar cells, respectively. In0.2Ga0.8N, In0.4Ga0.6N和In0.6Ga0.4N p-i-n同质结电池中, (a)转换效率和(b)收集效率随p层空穴浓度NA+的关系
Fig. 3. Under AM1.5 illumination and zero bias, electric-field of (a) In0.2Ga0.8N, (c) In0.4Ga0.6N and (e) In0.6Ga0.4N p-i-n homojunction solar cells with various hole concentration (NA+);
Fig. 4. (a) Conversion efficiency and (b) collection efficiency versus p-layer thickness for In0.2Ga0.8N, In0.4Ga0.6N and In0.6Ga0.4N p-i-n homojunction solar cells, respectively. In0.2Ga0.8N, In0.4Ga0.6N和In0.6Ga0.4N p-i-n同质结电池中, (a)转换效率和(b)收集效率随p层厚度的变化
Fig. 5. (a) Short current density (
Fig. 6. (a)
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Hong-Ying Pan, Zhi-Jue Quan.
Received: Jun. 8, 2019
Accepted: --
Published Online: Sep. 16, 2020
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