Electro-Optic Technology Application, Volume. 26, Issue 4, 53(2011)
PLD Preparation and Characterization of ZnS Films on Porous Silicon Substrates
[1] [1] Canham L T. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers[J]. Appl.Phys.Lett,1990,57(10):1046-1048.
[2] [2] Velumani S,Ascencio J A. Formation of ZnS nanorods by simple evaporation technique[J]. Applied Physics A: MaterialsScience﹠Processing,2004,79(1):153-156.
[3] [3] Wang Cai-Feng,Li Qing-Shan,Hu Bo,et al. The effect of annealing on structural,optical and electrical properties of ZnS/porous silicon composites[J]. Chinese Physics B,2009,18(6):2610-2614.
[4] [4] Yano S,Schroeder R,Sakia H,et al. High-electric-field photocurrent in thin-film ZnS formed by pulsed-laser deposition[J].Appl.Phys.Lett,2003,82(13):2026-2028.
[5] [5] NasrallahTBen,Amlouk M,Bernede J C,et al. Structure and morphology of sprayedZnS thin films [J]. Phys. Stat.Sol.,2004,201(14):3070-3076.
[6] [6] Wang Caifeng,Li Qingshan,Lv Lei,et al. Structural, Optical and Electrical Properties of ZnS/ Porous Silicon Heterostructures [J]. Chinese Physics Letters,2007,24(3):825-827.
[7] [7] XU Dongsheng,GUO Guolin,GUI Linlin. Controlling growth and field emission property of aligned carbon nanotubes on porous silicon [J].Appl. Phys. Lett,1999, 75(4):481-484.
[8] [8] Morozova N K,Karetnikov I A,Plotnichenko V G,et al. Transformation of luminescence centers in CVD ZnS films subjected to a high hydrostatic pressure[J]. Semiconductors, 2004,38(1):36-41.
[9] [9] Prokes S M,Freitas Jr. JA,Searson PC. Microlumines cence depth profiles and annealing effects in porous silicon[J].Appl.Phys.Lett.,1992,60(26):3295-3297.
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WANG Cai-feng, LI Qing-shan, HUBo, LI Wei-bing, YI Hou-hui. PLD Preparation and Characterization of ZnS Films on Porous Silicon Substrates[J]. Electro-Optic Technology Application, 2011, 26(4): 53
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Received: Jun. 11, 2011
Accepted: --
Published Online: Sep. 9, 2011
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