Journal of Terahertz Science and Electronic Information Technology , Volume. 20, Issue 6, 523(2022)

Advance in space radiation effects of SiGe heterojunction bipolar transistors

LI Pei1、*, HE Chaohui1, GUO Hongxia2, ZHANG Jinxin3, WEI Jia'nan4, and LIU Mohan5
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    LI Pei, HE Chaohui, GUO Hongxia, ZHANG Jinxin, WEI Jia'nan, LIU Mohan. Advance in space radiation effects of SiGe heterojunction bipolar transistors[J]. Journal of Terahertz Science and Electronic Information Technology , 2022, 20(6): 523

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    Paper Information

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    Received: Dec. 30, 2021

    Accepted: --

    Published Online: Aug. 15, 2022

    The Author Email: Pei LI (lipei0916@xjtu.edu.cn)

    DOI:10.11805/tkyda2021443

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