Chinese Journal of Quantum Electronics, Volume. 40, Issue 4, 492(2023)
Effect of annealing temperature on the quality and optical properties of Mg2Si films on sapphire substrates
Figures & Tables(5)
Fig. 1. XRD patterns of Mg2Si films on sapphire substrates annealed at different temperature
Fig. 2. (a)-(e) SEM images of Mg2Si thin films on sapphire substrates annealed at different temperature;(f) A SEM image of Mg2Si particles in reference [17]
Fig. 3. (a) Raman spectra of Mg2Si films on sapphire substrates annealed at different temperature (in the range of 200⁃800 cm-1); (b) Comparison of the intensity of the scattering peaks near 256 cm-1 of each sample at different annealing temperature (in the range of 200⁃300 cm-1); (c) Raman active mode (F2g) of Mg2Si; (d) Infrared active mode (F1u) of Mg2Si
Fig. 4. Infrared transmittance spectra of Mg2Si films on sapphire substrates annealed at different temperature
Fig. 5. Tauc plots of Mg2Si films on sapphire substrates annealed at different temperature
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Yangfang LIAO, Quan XIE. Effect of annealing temperature on the quality and optical properties of Mg2Si films on sapphire substrates[J]. Chinese Journal of Quantum Electronics, 2023, 40(4): 492
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Received: Jul. 23, 2021
Accepted: --
Published Online: Aug. 22, 2023
The Author Email: XIE Quan (qxie@gzu.edu.cn)
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