Journal of Semiconductors, Volume. 44, Issue 3, 032801(2023)
Investigation of UV photosensor properties of Al-doped SnO2 thin films deposited by sol-gel dip-coating method
Figures & Tables(13)
Fig. 1. (Color online) The schematic drawing of pure and Al-doped SnO2 thin films produced with a sol-gel dip coating method.
Fig. 3. (Color online) XRD patterns of undoped and Al-doped SnO2 thin films.
Fig. 4. (Color online) 3D surface morphologies of SnO2 thin films with various Al doping concentrations.
Fig. 5. (Color online) Optical transmittance spectra of undoped and Al-doped SnO2 thin films.
Fig. 6. (Color online) Plots
Fig. 7. (Color online) Variation of (a) dark current and (b) photocurrent as a function of applied voltage for undoped and aluminum doped SnO2 thin films.
Fig. 8. (Color online) Photoconductivity rise and decay time spectra of undoped and Al-doped SnO2 thin films.
Fig. 9. (Color online) A schematic of the photoresponse mechanism and energy band diagram of Al:SnO2 thin films.
Fig. 10. (Color online) Rise and decay photoresponse curves of pure and Al-doped SnO2 thin films.
Table 0. XRD parameters, crystallite size, strain and RMS of undoped and Al-doped SnO2 thin films.
View tableView in ArticleTable 0. XRD parameters, crystallite size, strain and RMS of undoped and Al-doped SnO2 thin films.
Sample 2θ (°) Β (°) D (nm) Strain (10−3) =b (Å) c (Å) RMS (nm) Ra (nm) Da (nm) SnO2 26.79 0.71 11.92 3.27 4.700 3.203 5.06 4.25 73.0 3 wt.% Al-SnO2 26.56 0.74 11.40 3.42 4.742 3.195 2.32 1.76 45.5 5 wt.% Al-SnO2 26.58 0.99 08.54 4.60 4.738 3.161 2.01 1.67 29.3
Table 0. The values of photocurrent, dark current,ION/IOFF ratio, rise time constant (tr), decay time constants (td1,td2) and defect levels energy (trap depth (E1,E2)) for undoped and Al-doped SnO2 thin films.
View tableView in ArticleTable 0. The values of photocurrent, dark current,ION/IOFF ratio, rise time constant (tr), decay time constants (td1,td2) and defect levels energy (trap depth (E1,E2)) for undoped and Al-doped SnO2 thin films.
Sample ION (A) IOFF (A) ION/IOFF tr (s) td1 (s) td2 (s) E1 (eV) E2 (eV) Ref. SnO2 1.22 × 10−2 7.75 × 10−5 217.85 28 11.33 73.14 0.598 0.64 This work 3 wt.% Al-SnO2 3.56 × 10−4 1.30 × 10−6 273.84 15 5.64 48.15 0.580 0.63 This work 5 wt.% Al-SnO2 3.03 × 10−6 1.95 × 10−8 155.38 24 5.33 49.94 0.579 0.63 This work Mg-ZnO films – – 8.49 196 14.3 112.1 0.640 0.70 [ 68 ]Cu/LiZnO 9.6 × 10−11 1.20 × 10−7 1250 769 35 222 – – [ 69 ]SnO2films 3.2×10−11 1.43 × 10−9 44 250 506 – – – [ 39 ]
Table 0. The values of Texture Coefficient of undopedand Al-doped SnO2 thin films.
View tableView in ArticleTable 0. The values of Texture Coefficient of undopedand Al-doped SnO2 thin films.
Sample Tc(hkl) of SnO2 thin films (110) (101) (200) (210) SnO2 1.22 1.17 0.78 0.83 3 wt.% Al-SnO2 1.41 0.94 0.86 0.77 5 wt.% Al-SnO2 1.33 1.12 0.62 0.91
Tools
Get Citation
Copy Citation Text
Kaour Selma, Benkara Salima, Bouabida Seddik, Rechem Djamil, Hadjeris Lazhar. Investigation of UV photosensor properties of Al-doped SnO2 thin films deposited by sol-gel dip-coating method[J]. Journal of Semiconductors, 2023, 44(3): 032801
Paper Information
Category: Articles
Received: Sep. 10, 2022
Accepted: --
Published Online: Mar. 30, 2023
The Author Email: Salima Benkara (sali_benkara@yahoo.fr)
© Copyright 2018-2021 | Chinese Laser Press.
All Rights Reserved 沪ICP备15018463号-20