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Infrared and Laser Engineering, Volume. 34, Issue 5, 544(2005)

GaN epilayer by infrared spectroscopic ellipsometry

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. GaN epilayer by infrared spectroscopic ellipsometry[J]. Infrared and Laser Engineering, 2005, 34(5): 544

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    Paper Information

    Category: 光学技术及应用

    Received: Dec. 27, 2004

    Accepted: Mar. 5, 2005

    Published Online: May. 25, 2006

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    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology