Microelectronics, Volume. 52, Issue 6, 1061(2022)
Research on Saturated Current Influencing Factor and Technology Optimization of NJFET
References(2)
[2] [2] DIMITRIJEV S. Principles of semiconductor devices ［J］. IEEE Circ & Dev Magaz, 2011, 22(5): 58-59.
[3] [3] SZE S M, NG K K. Physics of semiconductor devices ［M］. Hoboken: John Wiley & Sons, 2007: 16-25.
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CHEN Peicang, ZHU Saining, PAN Jianhua, CHEN Huirong. Research on Saturated Current Influencing Factor and Technology Optimization of NJFET[J]. Microelectronics, 2022, 52(6): 1061
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Received: Apr. 8, 2022
Accepted: --
Published Online: Mar. 11, 2023
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