Acta Photonica Sinica, Volume. 53, Issue 12, 1225002(2024)
Optimization of Photodetector Performance in MoTe2/MoS2 Heterojunctions Based on Surface Engineering Regulation
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Fig. 1. The intrinsic optoelectronic performance of the MoTe2/MoS2 heterojunction photodetector
Fig. 2. The optoelectronic performance of annealed MoTe2/MoS2 heterojunction photodetectors
Fig. 3. Optoelectronic performance of MoTe2/MoS2 heterojunction devices after F4-TCNQ and R6G doping
Fig. 4. Comparison of response time of MoTe2/MoS2 heterojunction devices before and after F4-TCNQ doping
Table 1. Research progress on performance of heterojunction optoelectronic devices of the same kind
View tableView in ArticleTable 1. Research progress on performance of heterojunction optoelectronic devices of the same kind
Device structure Measurement conditions Responsivity/（mA·W-1） Detectivity/Jones Response time Reference MoTe2/Si λ=700 nm
Vds=0 V
0.26 1.6×1012 tr=5 μs
tf=8 μs
［ 19 ］MoTe2/Graphene λ=915 nm 12 460 3.3×1012 tr=5 ms
tf=5 ms
［ 20 ］Graphene/InSe/MoS2 λ=532 nm
Vds<0 V
0.11 1.08×1010 tr<1 ms
tf<1 ms
［ 21 ］MoTe2/Ge Near-infrared region
Vds=0 V
4.87 5.02×1011 tr=7 μs
tf=4 μs
［ 22 ］MoTe₂/MoS₂ λ=637 nm
Vds=-2 V
0.23 4.75×1011 tr=77 μs
tf=72 μs
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Zijian WANG, Huiling ZUO, Meng WANG, Chenglin WANG, Haiyan NAN. Optimization of Photodetector Performance in MoTe2/MoS2 Heterojunctions Based on Surface Engineering Regulation[J]. Acta Photonica Sinica, 2024, 53(12): 1225002
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Received: Jun. 12, 2024
Accepted: Jul. 19, 2024
Published Online: Jan. 15, 2025
The Author Email: Haiyan NAN (jnanhaiyan@jiangnan.edu.cn)
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