Photonics Research, Volume. 9, Issue 12, 2429(2021)

Ultrasmall and ultradense InGaN-based RGB monochromatic micro-light-emitting diode arrays by pixilation of conductive p-GaN

Zhe Zhuang, Daisuke Iida, and Kazuhiro Ohkawa*
Author Affiliations
  • Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
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    Figures & Tables(6)
    Schematics of fabrication processes for InGaN-based RGB monochromatic μLEDs by pixilation of conductive p-GaN.
    |I|−V curves of InGaN-based RGB μLEDs and the blue LED with passivated p-GaN.
    (a) EL spectra. (b) FWHM of RGB monochromatic μLEDs at 11.5 to 115 A/cm2.
    On-wafer LOP density of RGB monochromatic μLEDs at different current densities.
    (a)−(c) EL emission images of RGB monochromatic μLED arrays at 115 A/cm2. The scale bar in the inset is 50 μm. (d) CIE 1931 diagram of RGB monochromatic μLED arrays at 11.5 and 115 A/cm2.
    • Table 1. Comparison of LOP Density for InGaN-Based Red μLEDs

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      Table 1. Comparison of LOP Density for InGaN-Based Red μLEDs

      AffiliationPeak Wavelength (nm)Current Density (A/cm2)LOP Density (mW/cm2)
      KAUST (this work)632115936
      KAUST [13]626429
      KAUST [35]63050176
      UCSB [11]6321040
      Univ. of Grenoble-Alpes [9]6300.80.4
      Plessey [36]63010
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    Zhe Zhuang, Daisuke Iida, Kazuhiro Ohkawa, "Ultrasmall and ultradense InGaN-based RGB monochromatic micro-light-emitting diode arrays by pixilation of conductive p-GaN," Photonics Res. 9, 2429 (2021)

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    Paper Information

    Category: Optoelectronics

    Received: Aug. 5, 2021

    Accepted: Oct. 14, 2021

    Published Online: Nov. 12, 2021

    The Author Email: Kazuhiro Ohkawa (kazuhiro.ohkawa@kaust.edu.sa)

    DOI:10.1364/PRJ.439741

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