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Optoelectronics Letters, Volume. 10, Issue 3, 202(2014)

Optical absorption enhancement of μc-SiGe:H films deposited via high pressure and high power

Tian-wei LI... Jian-jun ZHANG*, Yu CAO, Zhen-hua HUANG, Jun MA, Jian NI and Ying ZHAO |Show fewer author(s)
Author Affiliations
  • Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-electronic,Information Science and Technology, Ministry of Education of China, Institute of Photo-electronic Thin Film Devices and Technique, Nankai University, Tianjin 300071, China
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    LI Tian-wei, ZHANG Jian-jun, CAO Yu, HUANG Zhen-hua, MA Jun, NI Jian, ZHAO Ying. Optical absorption enhancement of μc-SiGe:H films deposited via high pressure and high power[J]. Optoelectronics Letters, 2014, 10(3): 202

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    Paper Information

    Received: Jan. 7, 2014

    Accepted: --

    Published Online: Oct. 12, 2017

    The Author Email: Jian-jun ZHANG (jjzhang@nankai.edu.cn)

    DOI:10.1007/s11801-014-4007-9

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology