<trans-title xml:lang="en">Preparation, doping modulation and field emission properties of square-shaped GaN nanowires</trans-title>

Meng-Qi Yang; Yu-Hang Ji; Qi Liang; Chang-Hao Wang; Yue-fei Zhang; Ming Zhang; Bo Wang; Ru-Zhi Wang

doi:10.7498/aps.69.20200445

Acta Physica Sinica, Volume. 69, Issue 16, 167805-1(2020)

Preparation, doping modulation and field emission properties of square-shaped GaN nanowires

Meng-Qi Yang1... Yu-Hang Ji2, Qi Liang1, Chang-Hao Wang1, Yue-fei Zhang3, Ming Zhang1, Bo Wang1 and Ru-Zhi Wang1,* |Show fewer author(s)

Author Affiliations

¹College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China

²School of Physics, Beihang University, Beijing 100191, China

³Institute and Beijing Key Laboratory of Solid Microstructure and Properties, Beijing University of Technology, Beijing 100124, China

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Fig. 1. FESEM images Mg doped GaN nanowires prepared at different source materials ratio. (a) Sample A-a; (b) sample A-b; (c) sample A-c; (d) sample A-d; (e) sample A-e.

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Fig. 2. FESEM images Mg doped GaN nanowires prepared at different growth times. (a) Sample B-a; (b) sample B-b; (c) sample B-c; (d) sample B-d.

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Fig. 3. XRD spectra of sample A-e.

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Fig. 4. XPS spectra of sample A-e.

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Fig. 5. (a) TEM image; (b) HRTEM image and SAED pattern (inset) of sample A-e.

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Fig. 6. Schematic diagram of nucleation and growth for square-shaped GaN nanowires.

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Fig. 7. (a) PL spectra of sample A-a and sample A-e; (b) band gap analysis spectra of sample A-e.

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Fig. 8. (a) J-E curves; (b) F-N curves of sample A-a and sample A-e.

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Table 1.
The experimental parameter of preparing Mg doped GaN nanowiresat different source materials ratio.
不同原料配比制备Mg掺杂GaN纳米线的实验参数

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Table 1.
The experimental parameter of preparing Mg doped GaN nanowiresat different source materials ratio.
不同原料配比制备Mg掺杂GaN纳米线的实验参数

编号	N₂/sccm	气压/Torr	T/℃	t/min	微波功率/W	C∶Ga₂O₃∶MgO
A-a	13	10	870	30	300	12∶1∶0
A-b	13	10	870	30	300	12：1：0.2
A-c	13	10	870	30	300	12∶1∶0.5
A-d	13	10	870	30	300	12∶1∶1
A-e	13	10	870	30	300	12∶1∶1.5

Table 2.
The experimental parameter of preparing Mg doped GaN nanowiresat different growth time.
不同生长时间制备Mg掺杂GaN纳米线的实验参数

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Table 2.
The experimental parameter of preparing Mg doped GaN nanowiresat different growth time.
不同生长时间制备Mg掺杂GaN纳米线的实验参数

编号	N₂/sccm	气压/Torr	T/℃	t/min	微波功率/W	C∶Ga₂O₃∶MgO
B-a	13	10	870	10	300	12∶1∶1.5
B-b	13	10	870	20	300	12∶1∶1.5
B-c	13	10	870	30	300	12∶1∶1.5
B-d	13	10	870	40	300	12∶1∶1.5

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Meng-Qi Yang, Yu-Hang Ji, Qi Liang, Chang-Hao Wang, Yue-fei Zhang, Ming Zhang, Bo Wang, Ru-Zhi Wang. Preparation, doping modulation and field emission properties of square-shaped GaN nanowires[J]. Acta Physica Sinica, 2020, 69(16): 167805-1

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Paper Information

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Received: Mar. 25, 2020

Accepted: --

Published Online: Jan. 4, 2021

The Author Email:

DOI:10.7498/aps.69.20200445

Topics

Nuclear physics

Particles and fields

Particle and nuclear astrophysics and cosmology

Table 1. The experimental parameter of preparing Mg doped GaN nanowiresat different source materials ratio.不同原料配比制备Mg掺杂GaN纳米线的实验参数

Table 1. The experimental parameter of preparing Mg doped GaN nanowiresat different source materials ratio.不同原料配比制备Mg掺杂GaN纳米线的实验参数

Table 2. The experimental parameter of preparing Mg doped GaN nanowiresat different growth time.不同生长时间制备Mg掺杂GaN纳米线的实验参数

Table 2. The experimental parameter of preparing Mg doped GaN nanowiresat different growth time.不同生长时间制备Mg掺杂GaN纳米线的实验参数

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Table 1.
The experimental parameter of preparing Mg doped GaN nanowiresat different source materials ratio.
不同原料配比制备Mg掺杂GaN纳米线的实验参数

Table 1.
The experimental parameter of preparing Mg doped GaN nanowiresat different source materials ratio.
不同原料配比制备Mg掺杂GaN纳米线的实验参数

Table 2.
The experimental parameter of preparing Mg doped GaN nanowiresat different growth time.
不同生长时间制备Mg掺杂GaN纳米线的实验参数

Table 2.
The experimental parameter of preparing Mg doped GaN nanowiresat different growth time.
不同生长时间制备Mg掺杂GaN纳米线的实验参数