Acta Physica Sinica, Volume. 69, Issue 16, 167805-1(2020)
GaN nanomaterials, as one of the most important third-generation semiconductor materials, have attracted wide attention. In this study, GaN nanowires with square cross section were successfully prepared by microwave plasma chemical vapor deposition system. The diameters of nanowires are from 300 to 500 nm and the lengths from 15 to 20 μm. The results show that the cross section of nanowires could be transformed from triangle into square by adjusting the ratio of Mg to Ga in source materials. X-ray diffraction(XRD)result indicate that the structure of GaN nanowires are agree with the hexagonal wurtzite. X-ray photoelectron spectroscopy (XPS) rusult show that a certain amount of Mg and O impurities incoporated in the square-shaped GaN nanowires. Transmission electron microscopy (TEM) result suggested that square-shaped GaN nanowires had high crystallinity with a growth direction of [
Get Citation
Copy Citation Text
Meng-Qi Yang, Yu-Hang Ji, Qi Liang, Chang-Hao Wang, Yue-fei Zhang, Ming Zhang, Bo Wang, Ru-Zhi Wang.
Category:
Received: Mar. 25, 2020
Accepted: --
Published Online: Jan. 4, 2021
The Author Email: