Fig. 1. STEM cross-sectional image of the 850 nm VCSEL; (b) Magnification of the partial structure of AlGaAs/GaAs MQWs

Fig. 2. Curve of I-V characteristics with the amount of the injected after 10 MeV proton irradiation

Fig. 3. Variation curve of L-I characteristics with fluence after 10 MeV proton irradiation

Fig. 4. Relationship between normalized threshold current and proton fluence

Fig. 5. Relationship between external quantum efficiency and proton flux

Fig. 6. L-I-V characteristic curve after γ－ray irradiation

Fig. 7. Relationship between threshold current and annealing time of VCSEL under 20 mA current injection

Fig. 8. Relationship between light output power and annealing time of VCSEL under 25 mA current injection