[1] [1] AHMED M,YAMADA M .Influence of instantaneous mode competition on the dynamics of semiconductor lasers［J］.IEEE Journal of Quantum Electronics,2002,38(6):682-693.

[2] [2] WANG J,LU F Y,XIE C X,et al.Numerical analysis and experimental results of output performance for large mode area Yb3+-doped double-clad fiber lasers［C］.SPIE,2005,5644:540-544.

[3] [3] LI Jiu-sheng,BAO Zhen-wu,JIN Jie.Neural network model for the noise characteristics of semiconductor laser［J］.Acta Photonica Sinica,2005,34(2):195-198.

[4] [4] YANG Ling-zhen,YANG Hui-yan,WANG Yun-cai,et al.The operation mode of semiconductor laser with external cavity optical feedback［J］.Acta Photonica Sinica,2000,29(12):1118-1120.

[5] [5] OHTSUBO J.Chaos synchronization and chaotic signal masking in semiconductor lasers with optical feedback［J］.IEEE Journal of Quantum Electronics,2002,38(9):1141-1154.

[6] [6] TANG S,LIU J M.Sychronization of high-frequency chaotic optical pulses［J］.Opt Lett,2001,26:596-598.

[7] [7] KRAUSKOPF B,SCHNEIDER K,SIEBER J,et al.Excitability and self-pulsations near homoclinic bifurcations in semiconductor laser systems［J］.Opt Commun,2003,215(4):367-379.

[8] [8] MURAKAMI A,SHORE K A.Analogy between optically driven injection-locked laser diodes and driven damped linear oscillators［J］.Phys Rev A,2006,73(4):043804.

[9] [9] GOVIND P A,NILOY K D.Semiconductor lasers［M］.2nd ed.New York:Von Nostrand Reinhold,1993:58-298.

[10] [10] JIA Pei-jun,HE Kun,BAI Jin-tao.Theoretical analysis and experimental research of Ytterbium (Yb~(3+))-doped double-clad fiber laser［J］.Acta Photonica Sinica,2007,36(S1):64-67.

[11] [11] HUO Y,Cheo,PETER K.Modeling of passively Q-switched Er3+/Yb3+-codoped clad-pumped fiber lasers［J］.IEEE Journal on Selected Topics in Quantum Electronics,2005,11(3):658-666.

[12] [12] CHEN Jian-guo,LI Da-yi,LU Yu-cun.Experimental and theoretical studies on monitored signals from semiconductor diodes undergoing antireflection coatings［J］.Appl Opt,1991,30(31):4554-4559.

[13] [13] WANG Jia-ling,CHEN Jian-guo.Additional wavelength shift of peak gain due to inhomogeneous distributions of carriers inside semiconductor lasers［J］.IEEE Photon Tech Lett,1993,5(10):1171-1173.