[2] [2] Harbek G. Growth and physical properties of LPCVD polycrystalline silicon[J]. J. Electrochem. Society, 1984, 131(3): 675-679.

[3] [3] Oehrlein G S, Zhang Y. Fluorocarbon high-density plasmas. Ⅰ. Fluorocarbon film deposition and etching using CF4 and CHF3[J]. J. of Vacuum Science & Technol. A, 1994, 12(2): 323-332.

[4] [4] Duffalo J M, Monkowski J R. Particulate contamination and device performance[J]. Solid State Technol., 1984, 27(3): 109-114.

[5] [5] Janesick J R. Scientific Charge-Coupled Devices[M]. Bellingham: SPIE Press, 2001.

[6] [6] Fu Yuxia, Liu Zhihong, Liu Ronghua, et al. Process of Al-reactive ion etching[J]. Semiconductor Information, 2000, 37(5): 37-40.

[7] [7] Hess D W. Plasma etch chemistry of aluminum and aluminum alloy films[J]. Plasma Chem. and Plasma Proc., 1982, 2(2): 141-155.

[8] [8] Danner D A, Dalvie M, Hess D W. Plasma etching of aluminum a comparison of chlorinated etchants[J]. J. of The Electrochemical Society, 1987, 134(3): 669-673.