Process control monitor (PCM) is a key quality monitoring technique reflecting the process status of the production line. In this paper, it focuses on the factors affecting the test results of PCM in the fabrication process of charge coupled device (CCD), and the test results of PCM is statistically analyzed. The results show that, the sheet resistance is 18Ω/□ when the deposition temperature of LPCVD is 700℃ and the film thickness is 580nm. The contact resistance is 7Ω when the hole process adopts dry etching with CF4 flow rate of 15cm3/min and CHF3 flow rate of 45cm3/min. The threshold voltage of the MOS transistor is -8.5V when the energy and dose of phosphorus ion implanted into the buried channel under the gate are 250keV and 2.5×1012atoms/cm2, respectively. It can effectively avoid the metal leakage caused by residues when the secondary aluminum etching adopts Cl2 flow rate of 90cm3/min, BCl3 flow rate of 45cm3/min and N2 flow rate of 30cm3/min.