As a red emitting material, GaN∶Eu 3+ is very promising to be applied in GaN-based monolithic integrated full-color display devices. The current research focus is how to further control and optimize the luminescence characteristics of GaN∶Eu 3+ materials, and promote them to the practical stage. In this paper, the research progresses of optimizationing luminescence performance of GaN∶Eu 3+ materials from growth control, Mg 2+, Zn 2+, and Si 4+ co-doping control, and other rare earth element co-doping control, etc., are reviewed, the application potential of these methods is compared, the future work focus of GaN∶Eu 3+ materials is pointed out, and the trend of future development is prospected.