Acta Optica Sinica, Volume. 22, Issue 2, 223(2002)
Photoelectric Characteristics of Charge Transferring Metal Doped [60] Fullerenes
Physical jet deposition (PJD) method was used to form the C 60Ni films, one of the transition metal fullerides films, which were made into the Al/C 60Ni/ITO(indium tin oxide) layered structure photovoltaic cells. The photovoltaic effect and the forward and backward current-voltage characteristic of the cells were investigated and compared with the Al/C 60/ITO films. The enhancement of photovoltaic effect and rectification of Al/C 60Ni interface was observed. It indicates the buildup of interface electrical dipolar field on the Al/C 60Ni interface, which was caused by the charge transfer from Ni atoms to C 60 molecules in the samples.
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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Photoelectric Characteristics of Charge Transferring Metal Doped [60] Fullerenes[J]. Acta Optica Sinica, 2002, 22(2): 223