Microelectronics, Volume. 52, Issue 6, 1050(2022)

A Miniaturized L-Band 1 000 W Internal Matching Power Amplifier Base on GaN HEMTs

LIU Kun
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    References(6)

    [2] [2] ZHAO Z M, ZHU X, ZHANG L. A broadband GaN HEMT power amplifier based on feeding capacitance compensation method [J]. Int J RF Microw Comput-Aid Engineer, 2021, 31(3): 73-79.

    [3] [3] JING S, ZHONG S, RAO H, et al. Design of 1.1 kW L-band GaN RF power amplifier [J]. Research & Progress of SSE, 2019, 5(2): 324-328.

    [4] [4] WANG Q, MA D L, YAN C. Design of S band high output power amplifier based on GaN technology [J]. Elec Quality, 2019, 4(4): 73-76.

    [6] [6] REUSCH D, STRYDOM J, LIDOW A. Thermal evaluation of chip-scale packaged gallium nitride transistors [J]. IEEE J Emerging and Selected Topics Power Elec, 2016, 4(3): 738-746.

    [7] [7] JONES E A, WANG F, COSTINETT D. Review of commercial GaN power devices and GaN-based converter design challenges [J]. IEEE J Emerging and Selected Topics Power Elec, 2016, 4(3): 707-719.

    [12] [12] AICH S, DHAR J, GARG S K, et al. High efficiency L-band GaN power amplifier [J]. Microw J, 2011, 54(10): 88-98.

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    LIU Kun. A Miniaturized L-Band 1 000 W Internal Matching Power Amplifier Base on GaN HEMTs[J]. Microelectronics, 2022, 52(6): 1050

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    Paper Information

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    Received: Nov. 2, 2021

    Accepted: --

    Published Online: Mar. 11, 2023

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.210418

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