Infrared and Laser Engineering, Volume. 49, Issue 12, 20201054(2020)

Repetition frequency variation of a 2 μm GaSb-based passively mode-locked laser (Invited)

Xiang Li1, Hong Wang2, Zhongliang Qiao3, Yu Zhang4, Zhichuan Niu4, Cunzhu Tong5, and Chongyang Liu1
Author Affiliations
  • 1Temasek Laboratories, Nanyang Technological University, Singapore 637553, Singapore
  • 2School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
  • 3School of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China
  • 4State Key Lab for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 5State Key Lab of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
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    References(11)

    [5] [5] Holc K, Weig T, Pletschen W, et al. Picosecond pulse generation in monolithic GaNbased multisection laser diodes[C]Gallium Nitride Materials Devices VIII. International Society f Optics Photonics, 2013, 8625: 862515.

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    Xiang Li, Hong Wang, Zhongliang Qiao, Yu Zhang, Zhichuan Niu, Cunzhu Tong, Chongyang Liu. Repetition frequency variation of a 2 μm GaSb-based passively mode-locked laser (Invited)[J]. Infrared and Laser Engineering, 2020, 49(12): 20201054

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    Paper Information

    Category: Advanced Laser Technology

    Received: Oct. 15, 2020

    Accepted: --

    Published Online: Jan. 14, 2021

    The Author Email:

    DOI:10.3788/IRLA20201054

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