Interfacial dynamics of GaP/Si(100) heterostructure grown by molecular beam epitaxy

Tieshi Wei; Xuefei Li; Zhiyun Li; Wenxian Yang; Yuanyuan Wu; Zhiwei Xing; Shulong Lu

doi:10.1088/1674-4926/43/12/122101

Journal of Semiconductors, Volume. 43, Issue 12, 122101(2022)

Interfacial dynamics of GaP/Si(100) heterostructure grown by molecular beam epitaxy

Tieshi Wei^1,2, Xuefei Li^1、*, Zhiyun Li³, Wenxian Yang¹, Yuanyuan Wu¹, Zhiwei Xing¹, and Shulong Lu^1、**

¹Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

²Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China

³Vacuum Interconnected Nanotech Workstation (NANO-X), Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

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Tieshi Wei, Xuefei Li, Zhiyun Li, Wenxian Yang, Yuanyuan Wu, Zhiwei Xing, Shulong Lu. Interfacial dynamics of GaP/Si(100) heterostructure grown by molecular beam epitaxy[J]. Journal of Semiconductors, 2022, 43(12): 122101

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Paper Information

Category: Articles

Received: Jun. 12, 2022

Accepted: --

Published Online: Dec. 27, 2022

The Author Email: Li Xuefei (xfli2011@sinano.ac.cn), Lu Shulong (sllu2008@sinano.ac.cn)

DOI:10.1088/1674-4926/43/12/122101

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