[1] [1] SCHUBERT E F, KIM J K. Solid-state light sources getting smart［J］. Science, 2005, 308: 1274-1278.

[2] [2] PIMPUTKAR S, SPECK J S, DENBAARS S P, et al. Prospects for LED lighting［J］. Nature Photonics, 2009, 3: 180-182.

[3] [3] NAKAMURA S, FASOL G. The blue laser diode: GaN based light emitters and lasers［M］. Berlin: Springer, 1997: 216.

[4] [4] LIAO Jin-sheng, YOU Hang-ying, WEN He-rui, et al. Synthesis and luminescence properties of La2(WO4)3∶Eu3+ red phosphors as LED application［J］. Acta Photonica Sinica, 2011, 40(5): 658-662.

[5] [5] WANG Zhi-jun, LI Pan-lai, GUO Qing-lin, et al. Spectral characteristics of Ba2B2P2O10∶ Eu2+ green phosphor for white LED［J］. Acta Photonica Sinica, 2011, 40(7): 1087-1090.

[6] [6] YAMADA M, NAITOU T, IZUMO K, et al. Red-enhanced white-light-emitting diode using a new red phosphor［J］. Japanese Journal Applied Physics, 2003, 42(1): L20-23.

[7] [7] SHEU J K, CHANG S J, KUO C H, et al. White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors［J］. IEEE Photonics Techology Letter, 2003, 15(1): 18-20.

[8] [8] BRINKLEY S, PFAFF N, DENAULT K A, et al. Robust thermal performance of Sr2Si5N8∶Eu2+∶An efficient red emitting phosphor for light emitting diode based white lighting［J］. Applied Physics Letter, 2011, 99(24): 241106-1-3.

[9] [9] OZDEN I, MAKARONA E, NURMIKKO A V, et al. A dual-wavelength indium gallium nitride quantum well light emitting diode［J］. Applied Physics Letter, 2001, 79(16): 2532-2534.

[10] [10] CHEN C H, CHANG S J, SU Y K. InGaN/GaN multiple-quantum-well dual-wavelength near-white light emitting diodes［J］. Physics Status Solidi (C), 2003, 0(7): 2257-2260.

[11] [11] WANG X H, JIA H Q, GUO L W, et al. White light-em itting diodes based on a single InGaN emission layer［J］. Applied Physics Letter, 2007, 91(16): 161912-1-3.

[12] [12] WANG X H, GUO L W, JIA H Q, et al. Control performance of a single-chip white light emitting diode by adjusting strain in InGaN underlying layer［J］. Applied Physics Letter, 2009, 94(11): 111913-1-3.

[13] [13] HONG Y J, LEE C H, YOON A, et al. Visible-color-tunable light-emitting diodes［J］. Advanced Materials, 2011, 23(29): 3284-3288.

[14] [14] MIRHOSSEINI R, SCHUBERT M F, CHHAJED S, et al. Improved color rendering and luminous efficacy in phosphor-converted white light-emitting diodes by use of dual-blue emitting active regions［J］. Optics Express, 2009, 17(13): 10806-10813.

[15] [15] CHEN Xian-wen, WU Qian, LI Shu-ti, et al. Optoelectronic properties of dual-wavelength InGaN/GaN Multi-quantum well light-emitting diodes［J］. Acta Photonica Sinica, 2011, 40(2): 190-193.

[16] [16] WANG C H, CHANG S P, CHANG W T, et al. Efficiency droop alleviation in InGaN/GaN light-emitting diodes by graded-thickness multiple quantum wells［J］. Applied Physics Letter, 2010, 97(18): 181101-1-3.

[17] [17] WANG C H, CHANG S P, KU P H, et al. Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers［J］. Applied Physics Letter, 2011, 99(17): 171106-1-3.

[18] [18] TASI M C, YEN S H, LU Y C, et al. Numerical study of blue InGaN light-emitting diodes with varied barrier thicknesses［J］. IEEE Photonics Technology Letter, 2011, 23(2): 76-78.

[19] [19] Crosslight Software Inc 2012 http://www.crosslight.com/products /apsys.shtml.

[20] [20] DNMEZ A, BAYHAN H, Conduction mechanism of an infrared emitting diode: Impedance spectroscopy and current-voltage analysis［J］. Semiconductors, 2012, 46(2): 251-256.