[1] NOVOSELOV K S, JIANG Z, ZHANG Y, et al. Room-temperature quantum hall effect in graphene[J]. Science, 315, 1379(2007).

[2] CHERNIKOV A, BERKELBACH T C, HILL H M, et al. Exciton binding energy and nonhydrogenic Rydberg series in monolayer WS₂[J]. Physical Review Letters, 113, 076802(2014).

[3] CHEN Y L, ANALYTIS J G, CHU J H, et al. Experimental realization of a three-dimensional topological insulator, Bi₂Te₃[J]. Science, 325, 178-181(2009).

[4] TAN Y, HE R Y, CHENG C, et al. Polarization-dependent optical absorption of MoS₂ for refractive index sensing[J]. Scientific Reports, 4, 7523(2014).

[5] YE Y, YE Z L, GHARGHI M, et al. Exciton-dominant electroluminescence from a diode of monolayer MoS₂[J]. Applied Physics Letters, 104, 193508(2014).

[6] CAO T, WANG G, HAN W P, et al. Valley-selective circular dichroism of monolayer molybdenum disulphide[J]. Nature Communications, 3, 887(2012).

[7] BRITNELL L, RIBEIRO R M, ECKMANN A, et al. Strong light-matter interactions in heterostructures of atomically thin films[J]. Science, 340, 1311-1314(2013).

[8] SPLENDIANI A, SUN L, ZHANG Y B, et al. Emerging photoluminescence in monolayer MoS₂[J]. Nano Letters, 10, 1271-1275(2010).

[9] RADISAVLJEVIC B, KIS A. Mobility engineering and a metal–insulator transition in monolayer MoS₂[J]. Nature Materials, 12, 815-820(2013).

[10] WANG H, YU L L, LEE Y H, et al. Integrated circuits based on bilayer MoS₂ transistors[J]. Nano Letters, 12, 4674-4680(2012).

[11] ZHANG Y J, OKA T, SUZUKI R, et al. Electrically switchable chiral light-emitting transistor[J]. Science, 344, 725-728(2014).

[12] BAUGHER B W H, CHURCHILL H O H, YANG Y Y, et al. Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide[J]. Nature Nanotechnology, 9, 262-267(2014).

[13] KUMAR N, HE J Q, HE D W, et al. Charge carrier dynamics in bulk MoS₂ crystal studied by transient absorption microscopy[J]. Journal of Applied Physics, 113, 133702(2013).

[14] ZHU L, HUANG Y, YAO Z, et al. Enhanced polarization-sensitive terahertz emission from vertically grown graphene by a dynamical photon drag effect[J]. Nanoscale, 9, 10301-10311(2017).

[15] APOSTOLOPOULOS V, BARNES M E. THz emitters based on the photo-Dember effect[J]. Journal of Physics D: Applied Physics, 47, 374002(2014).

[16] BAHK Y M, RAMAKRISHNAN G, CHOI J, et al. Plasmon enhanced terahertz emission from single layer graphene[J]. ACS Nano, 8, 9089-9096(2014).

[17] HUANG Y Y, ZHU L P, ZHAO Q Y, et al. Surface optical rectification from layered MoS₂ crystal by THz time-domain surface emission spectroscopy[J]. ACS Applied Materials & Interfaces, 9, 4956-4965(2017).

[18] ZHANG L H, HUANG Y Y, ZHAO Q Y, et al. Terahertz surface emission of d-band electrons from a layered tungsten disulfide crystal by the surface field[J]. Physical Review B, 96, 155202(2017).

[19] SI K Y, HUANG Y Y, ZHAO Q Y, et al. Terahertz surface emission from layered semiconductor WSe₂[J]. Applied Surface Science, 448, 416-423(2018).

[20] TONGAY S, SAHIN H, KO C, et al. Monolayer behaviour in bulk ReS₂ due to electronic and vibrational decoupling[J]. Nature Communications, 5, 3252(2014).

[21] ASLAN O B, CHENET D A, VAN DER ZANDE A M, et al. Linearly polarized excitons in single- and few-layer ReS₂ crystals[J]. ACS Photonics, 3, 96-101(2016).

[22] ZHANG E Z, JIN Y B, YUAN X, et al. ReS₂-based field-effect transistors and photodetectors[J]. Advanced Functional Materials, 25, 4076-4082(2015).

[23] GHATAK S, PAL A N, GHOSH A. Nature of electronic states in atomically thin MoS₂ field-effect transistors[J]. ACS Nano, 5, 7707-7712(2011).

[24] MCCREARY A, SIMPSON J R, WANG Y X, et al. Intricate resonant Raman response in anisotropic ReS₂[J]. Nano Letters, 17, 5897-5907(2017).

[25] REID M, CRAVETCHI I V, FEDOSEJEVS R. Terahertz radiation and second-harmonic generation from InAs: bulk versus surface electric-field-induced contributions[J]. Physical Review B, 72, 035201(2005).

[26] BARNES M E, BERRY S A, GOW P, et al. Investigation of the role of the lateral photo-Dember effect in the generation of terahertz radiation using a metallic mask on a semiconductor[J]. Optics Express, 21, 16263-16272(2013).

[27] GU P, TANI M, KONO S, et al. Study of terahertz radiation from InAs and InSb[J]. Journal of Applied Physics, 91, 5533-5537(2002).

[28] YU S, ZHU H, ESHUN K, et al. Strain-engineering the anisotropic electrical conductance in ReS₂ monolayer[J]. Applied Physics Letters, 108, 191901(2016).