Infrared and Laser Engineering, Volume. 36, Issue 4, 443(2007)

Temperature effect on Ⅰ-Ⅴ characteristics of the HgCdTe diodes

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    References(10)

    [1] [1] GOPAL V,SINGH S K,MEHRA R M.Analysis of dark current contributions in mercury cadmium telluride junction diodes[J].Infrared Phys & Tech,2002,43:317-326.

    [2] [2] GOPAL V,GUPTA S,BHAN R K,et,al.Modeling of dark characteristics of mercury cadmium telluride n+-p junctions[J].Infrared Phys& Technol,2003,44:143-152.

    [3] [3] HANSEN G L,SCHMIT J L.Calculate of intrinsic carrier concentration in Hg1-xCdxTe[J].J Appl Phys,1983,54(3):1639-1640.

    [4] [4] HANSEN G L,SCHMIT J L,CASSELMAN T N.Energy gap versus alloy composition and temperature in Hg1-xCdxTe[J].J Appl Phys,1982,53(10):7099-7101.

    [5] [5] GOPAL V,GUPTA S,BHAN R K,et al.Modeling of dark characteristics of mercury cadmium telluride n+-p junctions[J].Infrared Physics & Technology,2003,44:143-152.

    [6] [6] GOGALSKI A.Analysis of the R0A product in n+-p Hg1-xCdxTe photodiodes[J].Infrared Phys,1988,28(3):139-153.

    [7] [7] NATHAN V.Optical absorption in Hg1-xCdxTe[J].J Appl Phys,1998,83(5):2812-2814.

    [8] [8] BECK J D,KINCH M A,ESPOSITO E J,et,al.The MIS physics of the native oxide Hg1-xCdxTe interface[J].J Vac Sci Technol,1982,21(1):172-177.

    [9] [9] ROSENFELD D,BAHIR G.A model for the trap-assisted tunneling mechanism in diffused n-p and implanted n +-p HgCdTe photodiodes[J].IEEE Trans Electron Devices,1992,39(7):1638-1645.

    [10] [10] NEMIROVSKY Y,BLOOM I.Tunneling currents in reverse biased Hg1-xCdx Te photodiodes[J].Infrared Phys,1987,27(3):143-151.

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    [in Chinese], [in Chinese], [in Chinese]. Temperature effect on Ⅰ-Ⅴ characteristics of the HgCdTe diodes[J]. Infrared and Laser Engineering, 2007, 36(4): 443

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    Paper Information

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    Received: Aug. 11, 2006

    Accepted: Sep. 10, 2006

    Published Online: Feb. 18, 2008

    The Author Email: (刘大福(1979-)男山东济南人博士主要从事光电探测器的)

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